MOSFET 800V 0.2A 20Ohm N-Channel
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 800 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 0.2 A | ||
Resistance Drain-Source RDS (on) : | 20 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-223 | Packaging : | Reel |
Technical/Catalog Information | FQT1N80TF_WS |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25° C | 200mA |
Rds On (Max) @ Id, Vgs | 20 Ohm @ 100mA, 10V |
Input Capacitance (Ciss) @ Vds | 195pF @ 25V |
Power - Max | 2.1W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 7.2nC @ 10V |
Package / Case | SOT-223, SC-73, TO-261 (3 Leads + Tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FQT1N80TF_WS FQT1N80TF_WS FQT1N80TF_WSTR ND FQT1N80TF_WSTRND FQT1N80TF_WSTR |