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These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters.
FQP9P25 Maximum Ratings
Symbol
Parameter
FQP9P25
Units
VDSS
Drain-Source Voltage
-250
V
ID
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
-9.4
A
-5.9
A
IDM
Drain Current - Pulsed (Note 1)
-37.6
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy (Note 2)
650
mJ
IAR
Avalanche Current (Note 1)
-9.4
A
EAR
Repetitive Avalanche Energy (Note 1)
12
mJ
dv/dt
Peak Diode Recovery dv/dt (Note 3)
-5.5
V/ns
PD
Power Dissipation (TC = 25°C) - Derate above 25°C
120
W
0.96
W/
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, and DC-AC converters for uniteterrupted power supply,motor control.
FQPF10N20 Maximum Ratings
Symbol
Parameter
FQPF10N20
Units
VDSS
Drain-Source Voltage
200
V
ID
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
6.8
A
4.3
A
IDM
Drain Current - Pulsed (Note 1)
27.2
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy (Note 2)
180
mJ
IAR
Avalanche Current (Note 1)
6.8
A
EAR
Repetitive Avalanche Energy (Note 1)
4.0
mJ
dv/dt
Peak Diode Recovery dv/dt (Note 3)
5.5
V/ns
PD
Power Dissipation (TC = 25°C) - Derate above 25°C
40
W
0.32
W/
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters,switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.
FQPF10N20C Maximum Ratings
Symbol
Parameter
FQP10N20C
FQPF10N20C
Units
VDSS
Drain-Source Voltage
200
V
ID
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
9.5
9.5 *
A
6.0
6.0 *
A
IDM
Drain Current - Pulsed (Note 1)
38
38 *
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy (Note 2)
210
mJ
IAR
Avalanche Current (Note 1)
9.5
A
EAR
Repetitive Avalanche Energy (Note 1)
7.2
mJ
dv/dt
Peak Diode Recovery dv/dt (Note 3)
5.5
V/ns
PD
Power Dissipation (TC = 25°C) - Derate above 25°C
72
38
W
0.57
0.3
W/
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds