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FQP12N20, FQP12N20L, FQP12N60

Table of contents:
Info of FQP12N20
Info of FQP12N20L
Info of FQP12N60

FQP12N20, FQP12N20L, FQP12N60 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:04+

FQP12N20, FQP12N20L, FQP12N60 Datasheet download

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Part Number: FQP12N60

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-220

D/C: 04+

Description: MOSFET N-CH 600V 10.5A TO-220

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FQP12N20L General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters,switch mode power supply, motor control.

FQP12N20L Maximum Ratings

Symbol	Parameter	FQP12N20L	Units
V_DSS	Drain-Source Voltage	200	V
I_D	Drain Current - Continuous (T_C= 25) - Continuous (T_C= 100)	11.6	A
I_D		7.35	A
I_DM	Drain Current - Pulsed (Note 1)	46.4	A
V_GSS	Gate-Source Voltage	± 20	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	210	mJ
I_AR	Avalanche Current (Note 1)	11.6	A
E_AR	Repetitive Avalanche Energy (Note 1)	9.0	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	5.5	V/ns
P_D	Power Dissipation (T_C = 25) - Derate above 25	90	W
P_D	Power Dissipation (T_C = 25) - Derate above 25	0.72	W/
T_J , T_STG	Operating and Storage Temperature Range	-55 to +150
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300

FQP12N20L Features

* 11.6A, 200V, R_DS(on) = 0.28 @V_GS= 10 V
* Low gate charge ( typical 16 nC)
* Low Crss ( typical 17 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* Low level gate drive requirement allowing direct opration from logic drivers

FQP12N60 Parameters

Technical/Catalog Information	FQP12N60
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	10.5A
Rds On (Max) @ Id, Vgs	700 mOhm @ 5.3A, 10V
Input Capacitance (Ciss) @ Vds	1900pF @ 25V
Power - Max	180W
Packaging	Tube
Gate Charge (Qg) @ Vgs	54nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQP12N60 FQP12N60

FQP12N60 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

FQP12N60 Maximum Ratings

Symbol	Parameter	FQP12N60	Units
V_DSS	Drain-Source Voltage	600	V
I_D	Drain Current - Continuous (T_C = 25°C) - Continuous (T_C = 100°C)	10.5	A
I_D		6.7	A
I_DM	Drain Current - Pulsed (Note 1)	42	A
V_GSS	Gate-Source Voltage	± 30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	790	mJ
I_AR	Avalanche Current (Note 1)	10.5	A
E_AR	Repetitive Avalanche Energy (Note 1)	18	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	180	W
P_D	Power Dissipation (T_C = 25°C) - Derate above 25°C	1.43	W/°C
T_J, T_STG	Operating and Storage Temperature Range	-55 to +175	°C
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 13mH, I_AS = 10.5A, V_DD = 50V, R_G= 25 , Starting T_J = 25°C
3. I_SD 12A, di/dt 200A/s, V_DD BV_DSS, Starting T_J = 25°C

FQP12N60 Features

• 10.5A, 600V, R_DS(on) = 0.7 @ V_GS = 10 V
• Low gate charge ( typical 42 nC)
• Low Crss ( typical 25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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