Configuration
: Single
Mounting Style
: Through Hole
Transistor Polarity
: P-Channel
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Package / Case
: TO-220AB
Continuous Drain Current
: 11.5 A
Gate-Source Breakdown Voltage
: +/- 30 V
Resistance Drain-Source RDS (on)
: 0.47 Ohms
Drain-Source Breakdown Voltage
: - 200 V
Features: • -11.5A, -200V, R DS(ON)= 0.47Ω @VGS = -10 V
• Low gate charge ( typical 31 nC)
• Low Crss ( typical 30 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Specifications
|
Symbol |
Parameter |
FQPF17P10 |
Units |
|
VDSS |
Drain-Source Voltage |
-200 |
V |
|
ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
-11.5 |
A |
|
-7.27 |
A |
|
IDM |
Drain Current - Pulsed (Note 1) |
-46 |
A |
|
VGSS |
Gate-Source Voltage |
± 30 |
V |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
810 |
mJ |
|
IAR |
Avalanche Current (Note 1) |
|
A |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
12 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
-5.5 |
V/ns |
|
PD |
Power Dissipation (TC = 25°C)- Derate above 25°C |
120 |
W |
|
0.96 |
W/°C |
|
TJ, TSTG |
Operating and Storage Temperature Range |
-55 to +175 |
°C |
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |
°C |
DescriptionThese P-Channel enhancement mode power field effect transistors of FQP12P20 are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology of FQP12P20 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQP12P20 is well suited for low voltage applications such as audio amplifier,high efficiency switching DC/DC converters.
Parameters: | Technical/Catalog Information | FQP12P20 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 11.5A |
| Rds On (Max) @ Id, Vgs | 470 mOhm @ 5.75A, 10V |
| Input Capacitance (Ciss) @ Vds | 1200pF @ 25V |
| Power - Max | 120W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 40nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQP12P20
FQP12P20
|
FQP12P20 Data Sheet
