MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:1000 D/C:08+
FQP10N20, FQP10N20C, FQP10N20L Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: 1000
D/C: 08+
Description: MOSFET N-CH 200V 9.5A TO-220
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PDF/DataSheet Download
Datasheet: FQP10N20
File Size: 793262 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQP10N20C
File Size: 896385 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQP10N20L
File Size: 642363 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FQP10N20 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 10A |
| Rds On (Max) @ Id, Vgs | 360 mOhm @ 5A, 10V |
| Input Capacitance (Ciss) @ Vds | 670pF @ 25V |
| Power - Max | 87W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 18nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQP10N20 FQP10N20 |
| Technical/Catalog Information | FQP10N20C |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 9.5A |
| Rds On (Max) @ Id, Vgs | 360 mOhm @ 4.75A, 10V |
| Input Capacitance (Ciss) @ Vds | 510pF @ 25V |
| Power - Max | 72W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 26nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQP10N20C FQP10N20C |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters,switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.
|
Symbol |
Parameter |
FQP10N20C |
FQPF10N20C
|
Units |
|
VDSS |
Drain-Source Voltage |
200 |
V | |
|
ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
9.5
|
9.5 *
|
A |
|
6.0 |
6.0 * |
A | ||
|
IDM |
Drain Current - Pulsed (Note 1) |
38 |
38 * |
A |
|
VGSS |
Gate-Source Voltage |
± 30 |
V | |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
210 |
mJ | |
|
IAR |
Avalanche Current (Note 1) |
9.5 |
A | |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
7.2 |
mJ | |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns | |
|
PD |
Power Dissipation (TC = 25°C) - Derate above 25°C |
72 |
38 |
W
|
|
0.57 |
0.3
|
W/ | ||
|
TJ, TSTG |
Operating and Storage Temperature Range |
-55 to +150 |
°C | |
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |
°C | |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters,
switch mode power supplies, and motor control.
| Symbol | Parameter | FQP10N20L | Units |
| VDSS | Drain-Source Voltage | 200 | V |
| ID | Drain Current - Continuous (TC = 25) - Continuous (TC = 100) |
10 | A |
| 6.3 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 40 | A |
| VGSS | Gate-Source Voltage | ± 20 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 180 | mJ |
| IAR | Avalanche Current (Note 1) | 10 | A |
| EAR | Repetitive Avalanche Energy (Note 1) |
8.7 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
5.5 | V/ns |
| PD | Power Dissipation (TC = 25) - Derate above 25 |
87 | W |
| 0.7 | W/ | ||
| TJ , TSTG | Operating and Storage Temperature Range | -55 to +150 | |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
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