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These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier,high efficiency switching DC/DC converters, and DC motor control.
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier,high efficiency switching DC/DC converters.
FQP12P20 Maximum Ratings
Symbol
Parameter
FQPF17P10
Units
VDSS
Drain-Source Voltage
-200
V
ID
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
-11.5
A
-7.27
A
IDM
Drain Current - Pulsed (Note 1)
-46
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy (Note 2)
810
mJ
IAR
Avalanche Current (Note 1)
-11.5
A
EAR
Repetitive Avalanche Energy (Note 1)
12
mJ
dv/dt
Peak Diode Recovery dv/dt (Note 3)
-5.5
V/ns
PD
Power Dissipation (TC = 25°C)- Derate above 25°C
120
W
0.96
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +175
°C
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
