MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:NA/ D/C:09+
FQP140N03L, FQP14N15, FQP14N30 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: NA/
D/C: 09+
Description: MOSFET N-CH 300V 14.4A TO-220
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PDF/DataSheet Download
Datasheet: FQP140N03L
File Size: 603961 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQP14N15
File Size: 790889 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQP14N30
File Size: 746076 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Symbol | Parameter | FQP140N03L | Units |
| VDSS | Drain-Source Voltage | 30 | V |
| ID | Drain Current - Continuous (TC = 25) (Note 6) - Continuous (TC = 100) (Note 6) |
140 | A |
| 99 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 490 | A |
| VGSS | Gate-Source Voltage | ± 20 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 710 | mJ |
| IAR | Avalanche Current (Note 1) | 140 | A |
| EAR | Repetitive Avalanche Energy (Note 1) | 18 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 7.0 | V/ns |
| PD | Power Dissipation (TC = 25) - Derate above 25 |
180 | W |
| 1.2 | W/ | ||
| TJ , TSTG | Operating and Storage Temperature Range | -55 to +175 | |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds | 300 |
| Technical/Catalog Information | FQP14N15 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25° C | 14.4A |
| Rds On (Max) @ Id, Vgs | 210 mOhm @ 7.2A, 10V |
| Input Capacitance (Ciss) @ Vds | 715pF @ 25V |
| Power - Max | 104W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 23nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQP14N15 FQP14N15 |
| Technical/Catalog Information | FQP14N30 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 300V |
| Current - Continuous Drain (Id) @ 25° C | 14.4A |
| Rds On (Max) @ Id, Vgs | 290 mOhm @ 7.2A, 10V |
| Input Capacitance (Ciss) @ Vds | 1360pF @ 25V |
| Power - Max | 147W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 40nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQP14N30 FQP14N30 |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch motor power supply.
|
Symbol |
Parameter |
FQP14N30 |
Units |
|
VDSS |
Drain-Source Voltage |
300 |
V |
|
ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
14.4 |
A |
|
9.1 |
A | ||
|
IDM |
Drain Current - Pulsed (Note 1) |
57.6 |
A |
|
VGSS |
Gate-Source Voltage |
± 30 |
V |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
600 |
mJ |
|
IAR |
Avalanche Current (Note 1) |
14.4 |
A |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
14.7 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
|
PD |
Power Dissipation (TC = 25°C) - Derate above 25°C |
147 |
W
|
|
1.18 |
W/ | ||
|
TJ, TSTG |
Operating and Storage Temperature Range |
-55 to +150 |
°C |
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |
°C |
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