FQP4N20L

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 200 V
Continuous Drain Current : 3.8 A
Resistance Drain-Source RDS (on) : 1.35 Ohms


Features:

• 3.8A, 200V, R _DS(on) = 1.35Ω @V_GS = 10 V
• Low gate charge ( typical 4.0 nC)
• Low C_rss ( typical  6.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirement allowing direct operation from logic drivers


Specifications

Symbol	Parameter	FQP4N20L	Units
VDSS	Drain-Source Voltage	200	V
ID	Drain Current - Continuous (TC = 25°C)                       - Continuous (TC  = 100°C)	3.8	A
		2.4	A
IDM	Drain Current - Pulsed                (Note 1)	15.2	A
VGSS	Gate-Source Voltage	± 20	V
EAS	Single Pulsed Avalanche Energy (Note 2)	52	mJ
IAR	Avalanche Current                      (Note 1)	3.8	A
EAR	Repetitive Avalanche Energy      (Note 1)	4.5	mJ
dv/dt	Peak Diode Recovery dv/dt         (Note 3)	5.5	V/ns
PD	Power Dissipation (TC = 25°C)                            - Derate above 25°C	45	W
		0.36	W/
TJ, TSTG	Operating and Storage Temperature Range	-55 to +150	°C
TL	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300	°C

Description

These N-Channel enhancement mode power field effect transistors of FQP4N20L are produced using Fairchild's proprietary,planar stripe, DMOS technology.

This advanced technology of FQP4N20L is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. FQP4N20L is well suited for high efficiency switching DC/DC converters,switch mode power supplies, and motor control.

Parameters:

Technical/Catalog Information	FQP4N20L
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	3.8A
Rds On (Max) @ Id, Vgs	1.35 Ohm @ 1.9A, 10V
Input Capacitance (Ciss) @ Vds	310pF @ 25V
Power - Max	45W
Packaging	Tube
Gate Charge (Qg) @ Vgs	5.2nC @ 5V
Package / Case	TO-220
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQP4N20L FQP4N20L