FQP44N10

MOSFET 100V N-Channel QFET

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FQP44N10: MOSFET 100V N-Channel QFET

floor Price/Ceiling Price

US $ .46~.77 / Piece | Get Latest Price
Part Number:
FQP44N10
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.77
  • $.68
  • $.58
  • $.46
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 43.5 A
Resistance Drain-Source RDS (on) : 0.039 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 0.039 Ohms
Continuous Drain Current : 43.5 A


Features:

* 43.5A, 100V, RDS(on) = 0.039  @VGS = 10 V
* Low gate charge ( typical 48 nC)
* Low Crss ( typical  85 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating



Specifications

Symbol Parameter FQP44N10 Units
VDSS Drain-Source Voltage 100 V
ID
Drain Current - Continuous (TC = 25)
- Continuous (TC= 100)
43.5 A
30.8 A
IDM Drain Current - Pulsed (Note 1) 174 A
VGSS Gate-Source Voltage ± 25 V
EAS Single Pulsed Avalanche Energy  (Note 2) 530 mJ
IAR Avalanche Current  (Note 1) 43.5 A
EAR
Repetitive Avalanche Energy  (Note 1)
14.6 mJ
dv/dt
Peak Diode Recovery dv/dt  (Note 3)
6.0 V/ns
PD Power Dissipation (TC = 25)
- Derate above 25
146 W
0.97 W/
TJ  , TSTG Operating and Storage Temperature Range -55 to +175
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300



Description

  These N-Channel enhancement mode power field effect transistors of FQP44N10 are produced using Fairchild's proprietary,planar stripe, DMOS technology.

  This advanced technology of FQP44N10 is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. FQP44N10 is well suited for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.




Parameters:

Technical/Catalog InformationFQP44N10
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C43.5A
Rds On (Max) @ Id, Vgs39 mOhm @ 21.75A, 10V
Input Capacitance (Ciss) @ Vds 1800pF @ 25V
Power - Max146W
PackagingTube
Gate Charge (Qg) @ Vgs62nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQP44N10
FQP44N10



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