MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:09+
FQP5N60, FQP5N60C, FQP5N80 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: TO-220
D/C: 09+
Description: MOSFET N-CH 800V 4.8A TO-220
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PDF/DataSheet Download
Datasheet: FQP5N60C
File Size: 859293 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQP5N60C
File Size: 859293 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQP5N80
File Size: 676738 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FQP5N60C |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 4.5A |
| Rds On (Max) @ Id, Vgs | 2.5 Ohm @ 2.25A, 10V |
| Input Capacitance (Ciss) @ Vds | 670pF @ 25V |
| Power - Max | 100W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 19nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQP5N60C FQP5N60C |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies,active power factor correction, electronic lamp ballasts based on half bridge topology.
| Symbol | Parameter | FQP5N60C | FQPF5N60C | Units |
| VDSS |
Drain-Source Voltage | 600 | V | |
| ID | Drain Current - Continuous (TC = 25) - Continuous (TC = 100) |
4.5 |
4.5 * | A |
| 2.6 | 2.6 * | A | ||
| IDM |
Drain Current - Pulsed (Note 1) |
18 | 18 * | A |
| VGSS |
Gate-Source Voltage | ± 30 | V | |
| EAS |
Single Pulsed Avalanche Energy (Note 2) |
210 | mJ | |
| IAR | Avalanche Current (Note 1) | 4.5 | A | |
| EAR | Repetitive Avalanche Energy (Note 1) | 10 | mJ | |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 4.5 | V/ns | |
| PD |
Power Dissipation (TC = 25) - Derate above 25 |
100 | 33 | W |
| 0.8 | 0.26 | W/ | ||
| TJ , TSTG |
Operating and Storage Temperature Range | -55 to +150 | ||
| TL |
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 | ||
| Technical/Catalog Information | FQP5N80 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25° C | 4.8A |
| Rds On (Max) @ Id, Vgs | 2.6 Ohm @ 2.4A, 10V |
| Input Capacitance (Ciss) @ Vds | 1250pF @ 25V |
| Power - Max | 140W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 33nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQP5N80 FQP5N80 |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
| Symbol | Parameter | FQP5N80 | Units |
| VDSS | Drain-Source Voltage | 800 |
V |
| ID | Drain Current - Continuous (TC = 25) - Continuous (TC= 100) |
4.8 | A |
| 3.04 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 19.2 | A |
| VGSS | Gate-Source Voltage | ± 30 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 590 | mJ |
| IAR | Avalanche Curren (Note 1) | 4.8 | A |
| EAR | Repetitive Avalanche Energy (Note 1) |
14 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.0 | V/ns |
| PD | Power Dissipation (TC = 25) - Derate above 25 |
140 | W |
| 1.12 | W/ | ||
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
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