FQP140N03L

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Package / Case : TO-220
Resistance Drain-Source RDS (on) : 0.0045 Ohms
Continuous Drain Current : 140 A


Features:

• 140A, 30V, R_DS(on) = 0.0045 @V_GS = 10 V
• Low gate charge ( typical 73 nC)
• Low Crss ( typical 580 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating


Specifications

Symbol	Parameter	FQP140N03L	Units
VDSS	Drain-Source Voltage	30	V
ID	Drain Current - Continuous (TC = 25)           (Note 6)                       - Continuous (TC = 100)         (Note 6)	140	A
		99	A
IDM	Drain Current - Pulsed                                    (Note 1)	490	A
VGSS	Gate-Source Voltage	± 20	V
EAS	Single Pulsed Avalanche Energy                    (Note 2)	710	mJ
IAR	Avalanche Current                                         (Note 1)	140	A
EAR	Repetitive Avalanche Energy                         (Note 1)	18	mJ
dv/dt	Peak Diode Recovery dv/dt                           (Note 3)	7.0	V/ns
PD	Power Dissipation (TC = 25)          - Derate above 25	180	W
		1.2	W/
TJ , TSTG	Operating and Storage Temperature Range	-55 to +175
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300

Description

These N-Channel enhancement mode power field effect transistors of FQP140N03L are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology FQP140N03L has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQP140N03L is well suited for low voltage applications such as DC/DC converters, high efficiency switching for power management in portable and battery operated products.