FGK60N 6S2D, FGK60N6S2D, FGL DV63/GK30297 Selling Leads, Datasheet
MFG:FAIRCHILD D/C:09+
FGK60N 6S2D, FGK60N6S2D, FGL DV63/GK30297 Datasheet download
Part Number: FGK60N 6S2D
MFG: FAIRCHILD
Package Cooled:
D/C: 09+
FGK60N 6S2D, FGK60N6S2D, FGL DV63/GK30297
- Table of contents:
Info of FGK60N 6S2D
Info of FGK60N6S2D
Info of FGL DV63/GK30297
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About FGK60N6S2D
PDF/DataSheet Download
Datasheet: FGK60N6S2D
File Size: 189771 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FGK60N6S2D
PDF/DataSheet Download
Datasheet: FGK60N6S2D
File Size: 189771 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FGL40N120AND
PDF/DataSheet Download
Datasheet: FGL40N120AND
File Size: 504407 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
FGK60N6S2D General Description
The FGK60N6S2D is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for:
• Power Factor Correction (PFC) circuits
• Full bridge topologies
• Half bridge topologies
• Push-Pull circuits
• Uninterruptible power supplies
• Zero voltage and zero current switching circuits
IGBT formerly Developmental Type TA49346 Diode formerly Developmental Type TA49393
FGK60N6S2D Maximum Ratings
|
Symbol |
Parameter |
Ratings |
Units |
|
BVCES |
Collector to Emitter Breakdown Voltage |
600 |
V |
|
IC25 |
Collector Current Continuous, TC = 25°C |
75 |
A |
|
IC110 |
Collector Current Continuous, TC = 110°C |
75 |
A |
|
ICM |
Collector Current Pulsed (Note 1) |
320 |
A |
|
VGES |
Gate to Emitter Voltage Continuous |
±20 |
V |
|
VGEM |
Gate to Emitter Voltage Pulsed |
±30 |
V |
|
SSOA |
Switching Safe Operating Area at TJ = 150°C, Figure 2 |
200A at 600V |
A |
|
EAS |
Pulsed Avalanche Energy, ICE = 30A, L = 1mH, VDD = 50V |
700 |
mJ |
|
PD |
Power Dissipation Total TC = 25°C |
625 |
W |
| Power Dissipation Derating TC > 25°C |
5 |
W/°C | |
|
TJ |
Operating Junction Temperature Range |
-55 to 150 |
°C |
|
TSTG |
Storage Junction Temperature Range |
-55 to 150 |
°C |
FGK60N6S2D Features
• 100kHz Operation at 390V, 52A
• 200kHZ Operation at 390V, 31A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . 77ns at TJ = 125oC
• Low Gate Charge . . . . . . . . 140nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 700mJ
• Low Conduction Loss
• 200kHZ Operation at 390V, 31A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . 77ns at TJ = 125oC
• Low Gate Charge . . . . . . . . 140nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 700mJ
• Low Conduction Loss
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