FGL60N100D Selling Leads, Price trend, FGL60N100D DataSheet download, circuit diagram from SeekIC.com

Features: • High Speed Switching• Low Saturation Voltage : VCE(sat) = 2.5V @ IC = 60A• High Input Impedance• Built-in Fast Recovery DiodeApplication•Home Appliance, Induction Heater, IH JAR, Micro Wave OvenSpecifications Symbol Description FGA25N120AND ...

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SeekIC No. : 004341469 Detail

FGL60N100D: Features: • High Speed Switching• Low Saturation Voltage : VCE(sat) = 2.5V @ IC = 60A• High Input Impedance• Built-in Fast Recovery DiodeApplication•Home Appliance, Ind...

FGL60N100D Data Sheet

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Part Number:: FGL60N100D
Supply Ability:: 5000

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1~5000

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Negotiable

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15 Days

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Upload time: 2024/11/19

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What is this?

FGL60N100BNTD evaluate
US $2.54 - 3.44 / Piece

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US $1.93 - 2.82 / Piece

IGBT Transistors HIGH_POWER
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IGBT Transistors 60A 1000V

Product Details

Description

Features:

• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 2.5V @ IC = 60A
• High Input Impedance
• Built-in Fast Recovery Diode

Application

•Home Appliance, Induction Heater, IH JAR, Micro Wave Oven

Specifications

Symbol	Description	FGA25N120AND	Units
V_CES	Collector-Emitter Voltage	1000	V
V_GES	Gate-Emitter Voltage	± 25	V
I_C	Collector Current @ TC = 25°C	60	A
I_C	Collector Current @ TC = 100°C	42	A
I_{CM (1)}	Pulsed Collector Current	120	A
I_F	Diode Continuous Forward Current @ TC = 100°C	15	A
P_D	Maximum Power Dissipation @ TC = 25°C	176	W
P_D	Maximum Power Dissipation @ TC = 100°C	70	W
T_J	Operating Junction Temperature	-55 to +150	°C
T_stg	Storage Temperature Range	-55 to +150	°C
T_L	Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds	300	°C

Description

Insulated Gate Bipolar Transistors (IGBTs) FGL60N100D with trench gate structure have superior performance in conduction and switching to planar gate structure, and also have wide noise immunity. These devices are well suitable for IH applications

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FGL60N100D

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