FGL60N100BNTD

IGBT Transistors HIGH_POWER

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FGL60N100BNTD: IGBT Transistors HIGH_POWER

floor Price/Ceiling Price

US $ 2.54~3.44 / Piece | Get Latest Price
Part Number:
FGL60N100BNTD
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $3.44
  • $3.1
  • $2.82
  • $2.54
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/19

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1000 V
Collector-Emitter Saturation Voltage : 1.5 V Maximum Gate Emitter Voltage : +/- 25 V
Continuous Collector Current at 25 C : 60 A Gate-Emitter Leakage Current : +/- 500 nA
Power Dissipation : 180 W Maximum Operating Temperature : + 150 C
Package / Case : TO-264-3 Packaging : Tube    

Description

Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Collector-Emitter Saturation Voltage : 1.5 V
Continuous Collector Current at 25 C : 60 A
Maximum Gate Emitter Voltage : +/- 25 V
Power Dissipation : 180 W
Collector- Emitter Voltage VCEO Max : 1000 V
Package / Case : TO-264-3
Gate-Emitter Leakage Current : +/- 500 nA


Features:

• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A
• High Input Impedance
• Built-in Fast Recovery Diode





Application

·Micro- Wave Oven, I-H Cooker, I-H Jar, Induction Heater, Home Appliance




Specifications

Symbol Description
FGL60N100BNTD
Units
VGES Collector-Emitter Voltage
1000
V
VGES Gate-Emitter Voltage
± 25
V
IC Collector Current @ TC = 25°C
60
A
Collector Current @ TC = 100°C
42
A
ICM (1) Pulsed Collector Current
120
A
IF Diode Continuous Forward Current @ TC = 100°C
15
A
PD Maximum Power Dissipation @ TC = 25°C
180
W
Maximum Power Dissipation @ TC = 100°C
72
W
TJ Operating Junction Temperature
-55 to +150
°C
Tstg Storage Temperature Range
-55 to +150
°C
TL Maximum Lead Temp. for soldering
Purposes, 1/8" from case for 5 seconds
300
°C




Product Product status Eco Status Pricing* Package type Leads Packing method Package Drawing Package Marking Convention**
FGL60N100BNTD Full Production RoHS Compliant $4.24 TO-264 3 RAIL TBD Line 1: $Y (Fairchild logo)
Line 2: G60N100 Line 3: BNTD&3
FGL60N100BNTDTU Full Production RoHS Compliant $4.32 TO-264 3 RAIL TBD Line 1: $Y (Fairchild logo)
Line 2: G60N100 Line 3: BNTD&3
* Fairchild 1,000 piece Budgetary Pricing
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product FGL60N100BNTD is available. Click here for more information .





Description

Trench insulated gate bipolar transistors (IGBTs)FGL60N100BNTD with NPT technology show outstanding performance in conductionand switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for Induction Heating ( I-H ) applications






Parameters:

Technical/Catalog InformationFGL60N100BNTD
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)1000V
Current - Collector (Ic) (Max)60A
Vce(on) (Max) @ Vge, Ic2.9V @ 15V, 60A
Power - Max180W
Mounting TypeThrough Hole
Package / CaseTO-264
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FGL60N100BNTD
FGL60N100BNTD



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