IGBT Transistors HIGH_POWER
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Features: • High Speed Switching• Low Saturation Voltage : VCE(sat) = 2.5V @ IC = 60A&...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1000 V | ||
Collector-Emitter Saturation Voltage : | 1.5 V | Maximum Gate Emitter Voltage : | +/- 25 V | ||
Continuous Collector Current at 25 C : | 60 A | Gate-Emitter Leakage Current : | +/- 500 nA | ||
Power Dissipation : | 180 W | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-264-3 | Packaging : | Tube |
Symbol | Description |
FGL60N100BNTD |
Units |
VGES | Collector-Emitter Voltage |
1000 |
V |
VGES | Gate-Emitter Voltage |
± 25 |
V |
IC | Collector Current @ TC = 25°C |
60 |
A |
Collector Current @ TC = 100°C |
42 |
A | |
ICM (1) | Pulsed Collector Current |
120 |
A |
IF | Diode Continuous Forward Current @ TC = 100°C |
15 |
A |
PD | Maximum Power Dissipation @ TC = 25°C |
180 |
W |
Maximum Power Dissipation @ TC = 100°C |
72 |
W | |
TJ | Operating Junction Temperature |
-55 to +150 |
°C |
Tstg | Storage Temperature Range |
-55 to +150 |
°C |
TL | Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds |
300 |
°C |
Product | Product status | Eco Status | Pricing* | Package type | Leads | Packing method | Package Drawing | Package Marking Convention** |
---|---|---|---|---|---|---|---|---|
FGL60N100BNTD | Full Production | RoHS Compliant | $4.24 | TO-264 | 3 | RAIL | TBD | Line 1: $Y (Fairchild logo) Line 2: G60N100 Line 3: BNTD&3 |
FGL60N100BNTDTU | Full Production | RoHS Compliant | $4.32 | TO-264 | 3 | RAIL | TBD | Line 1: $Y (Fairchild logo) Line 2: G60N100 Line 3: BNTD&3 |
* Fairchild 1,000 piece Budgetary Pricing |
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples |
Package marking information for product FGL60N100BNTD is available. Click here for more information . |
Trench insulated gate bipolar transistors (IGBTs)FGL60N100BNTD with NPT technology show outstanding performance in conductionand switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for Induction Heating ( I-H ) applications
Technical/Catalog Information | FGL60N100BNTD |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 1000V |
Current - Collector (Ic) (Max) | 60A |
Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 60A |
Power - Max | 180W |
Mounting Type | Through Hole |
Package / Case | TO-264 |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FGL60N100BNTD FGL60N100BNTD |