IGBT Transistors 60A 1000V
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Features: • High Speed Switching• Low Saturation Voltage : VCE(sat) = 2.5V @ IC = 60A&...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1000 V | ||
Collector-Emitter Saturation Voltage : | 1.6 V | Maximum Gate Emitter Voltage : | +/- 25 V | ||
Continuous Collector Current at 25 C : | 60 A | Gate-Emitter Leakage Current : | +/- 500 nA | ||
Power Dissipation : | 176 W | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-264-3 | Packaging : | Tube |