MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-264 D/C:2008
FGL60N100BNTD, FGL60N100D, FGL60N170D Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: TO-264
D/C: 2008
Description: IGBT N-CH 1000V 60A TO-264
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PDF/DataSheet Download
Datasheet: FGL60N100BNTD
File Size: 698399 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FGL60N100D
File Size: 448808 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FGL60N170D
File Size: 572372 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FGL60N100BNTD |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 1000V |
| Current - Collector (Ic) (Max) | 60A |
| Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 60A |
| Power - Max | 180W |
| Mounting Type | Through Hole |
| Package / Case | TO-264 |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FGL60N100BNTD FGL60N100BNTD |
Trench insulated gate bipolar transistors (IGBTs) with NPTtechnology show outstanding performance in conductionand switching characteristics as well as enhancedavalanche ruggedness. These devices are well suited forInduction Heating ( I-H ) applications
| Product | Product status | Eco Status | Pricing* | Package type | Leads | Packing method | Package Drawing | Package Marking Convention** |
|---|---|---|---|---|---|---|---|---|
| FGL60N100BNTD | Full Production | RoHS Compliant | $4.24 | TO-264 | 3 | RAIL | TBD | Line 1: $Y (Fairchild logo) Line 2: G60N100 Line 3: BNTD&3 |
| FGL60N100BNTDTU | Full Production | RoHS Compliant | $4.32 | TO-264 | 3 | RAIL | TBD | Line 1: $Y (Fairchild logo) Line 2: G60N100 Line 3: BNTD&3 |
| * Fairchild 1,000 piece Budgetary Pricing |
| ** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples |
Package marking information for product FGL60N100BNTD is available. Click here for more information . |
Insulated Gate Bipolar Transistors (IGBTs) with trench gate structure have superior performance in conduction and switching to planar gate structure, and also have wide noise immunity. These devices are well suitable for IH applications
|
Symbol |
Description |
FGA25N120AND |
Units |
|
VCES |
Collector-Emitter Voltage |
1000 |
V |
|
VGES |
Gate-Emitter Voltage |
± 25 |
V |
|
IC |
Collector Current @ TC = 25°C |
60 |
A |
| Collector Current @ TC = 100°C |
42 |
A | |
|
ICM (1) |
Pulsed Collector Current |
120 |
A |
|
IF |
Diode Continuous Forward Current @ TC = 100°C |
15 |
A |
|
PD |
Maximum Power Dissipation @ TC = 25°C |
176 |
W |
| Maximum Power Dissipation @ TC = 100°C |
70 |
W | |
|
TJ |
Operating Junction Temperature |
-55 to +150 |
°C |
|
Tstg |
Storage Temperature Range |
-55 to +150 |
°C |
|
TL |
Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds |
300 |
°C |
|
Symbol |
Description |
FGA25N120AND |
Units |
|
VCES |
Collector-Emitter Voltage |
1700 |
V |
|
VGES |
Gate-Emitter Voltage |
± 25 |
V |
|
IC |
Collector Current @ TC = 25°C |
60 |
A |
| Collector Current @ TC = 100°C |
30 |
A | |
|
ICM (1) |
Pulsed Collector Current |
180 |
A |
|
IF |
Diode Continuous Forward Current @ TC = 100°C |
15 |
A |
|
IFM |
Diode Maximum Forward Current |
150 |
A |
|
PD |
Maximum Power Dissipation @ TC = 25°C |
200 |
W |
| Maximum Power Dissipation @ TC = 100°C |
80 |
W | |
|
TJ |
Operating Junction Temperature |
-55 to +150 |
°C |
|
Tstg |
Storage Temperature Range |
-55 to +150 |
°C |
|
TL |
Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds |
300 |
°C |
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