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FGL60N100BNTD, FGL60N100D, FGL60N170D

Table of contents:
Info of FGL60N100BNTD
Info of FGL60N100D
Info of FGL60N170D

FGL60N100BNTD, FGL60N100D, FGL60N170D Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-264 D/C:2008

FGL60N100BNTD, FGL60N100D, FGL60N170D Picture

FGL60N100BNTD, FGL60N100D, FGL60N170D Datasheet download

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Part Number: FGL60N100BNTD

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-264

D/C: 2008

Description: IGBT N-CH 1000V 60A TO-264

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FGL60N100BNTD Parameters

Technical/Catalog Information	FGL60N100BNTD
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	1000V
Current - Collector (Ic) (Max)	60A
Vce(on) (Max) @ Vge, Ic	2.9V @ 15V, 60A
Power - Max	180W
Mounting Type	Through Hole
Package / Case	TO-264
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FGL60N100BNTD FGL60N100BNTD

FGL60N100BNTD General Description

Trench insulated gate bipolar transistors (IGBTs) with NPTtechnology show outstanding performance in conductionand switching characteristics as well as enhancedavalanche ruggedness. These devices are well suited forInduction Heating ( I-H ) applications

FGL60N100BNTD Maximum Ratings

Product	Product status	Eco Status	Pricing*	Package type	Leads	Packing method	Package Drawing	Package Marking Convention**
FGL60N100BNTD	Full Production	RoHS Compliant	$4.24	TO-264	3	RAIL	TBD	Line 1: $Y (Fairchild logo) Line 2: G60N100 Line 3: BNTD&3
FGL60N100BNTDTU	Full Production	RoHS Compliant	$4.32	TO-264	3	RAIL	TBD	Line 1: $Y (Fairchild logo) Line 2: G60N100 Line 3: BNTD&3

* Fairchild 1,000 piece Budgetary Pricing

** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product FGL60N100BNTD is available. Click here for more information .

FGL60N100BNTD Features

• High Speed Switching
• Low Saturation Voltage : V_CE(sat) = 2.5 V @ I_C = 60A
• High Input Impedance
• Built-in Fast Recovery Diode

FGL60N100BNTD Typical Application

·Micro- Wave Oven, I-H Cooker, I-H Jar, Induction Heater, Home Appliance

FGL60N100D General Description

Insulated Gate Bipolar Transistors (IGBTs) with trench gate structure have superior performance in conduction and switching to planar gate structure, and also have wide noise immunity. These devices are well suitable for IH applications

FGL60N100D Maximum Ratings

Symbol	Description	FGA25N120AND	Units
V_CES	Collector-Emitter Voltage	1000	V
V_GES	Gate-Emitter Voltage	± 25	V
I_C	Collector Current @ TC = 25°C	60	A
I_C	Collector Current @ TC = 100°C	42	A
I_{CM (1)}	Pulsed Collector Current	120	A
I_F	Diode Continuous Forward Current @ TC = 100°C	15	A
P_D	Maximum Power Dissipation @ TC = 25°C	176	W
P_D	Maximum Power Dissipation @ TC = 100°C	70	W
T_J	Operating Junction Temperature	-55 to +150	°C
T_stg	Storage Temperature Range	-55 to +150	°C
T_L	Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds	300	°C

FGL60N100D Features

• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 2.5V @ IC = 60A
• High Input Impedance
• Built-in Fast Recovery Diode

FGL60N100D Typical Application

•Home Appliance, Induction Heater, IH JAR, Micro Wave Oven

FGL60N170D General Description

Fairchild's Insulated Gate Bipolar Transistor (IGBT) rovides low conduction and switching losses.

FGL60N170D is designed for the Induction Heating applications.

FGL60N170D Maximum Ratings

Symbol	Description	FGA25N120AND	Units
V_CES	Collector-Emitter Voltage	1700	V
V_GES	Gate-Emitter Voltage	± 25	V
I_C	Collector Current @ TC = 25°C	60	A
I_C	Collector Current @ TC = 100°C	30	A
I_{CM (1)}	Pulsed Collector Current	180	A
I_F	Diode Continuous Forward Current @ TC = 100°C	15	A
I_FM	Diode Maximum Forward Current	150	A
P_D	Maximum Power Dissipation @ TC = 25°C	200	W
P_D	Maximum Power Dissipation @ TC = 100°C	80	W
T_J	Operating Junction Temperature	-55 to +150	°C
T_stg	Storage Temperature Range	-55 to +150	°C
T_L	Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds	300	°C

FGL60N170D Features

• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 5.0 V @ IC = 60A
• High Input Impedance
• Built-in Fast Recovery Diode

FGL60N170D Typical Application

•Home Appliance, Induction Heater, IH JAR, Micro Wave Oven

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