FGK60N6S2D

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-247-3


Features:

• 100kHz Operation at 390V, 52A
• 200kHZ Operation at 390V, 31A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . 77ns at TJ = 125oC
• Low Gate Charge . . . . . . . . 140nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 700mJ
• Low Conduction Loss


Specifications

Symbol	Parameter	Ratings	Units
BVCES	Collector to Emitter Breakdown Voltage	600	V
IC25	Collector Current Continuous, TC = 25°C	75	A
IC110	Collector Current Continuous, TC = 110°C	75	A
ICM	Collector Current Pulsed (Note 1)	320	A
VGES	Gate to Emitter Voltage Continuous	±20	V
VGEM	Gate to Emitter Voltage Pulsed	±30	V
SSOA	Switching Safe Operating Area at TJ = 150°C, Figure 2	200A at 600V	A
EAS	Pulsed Avalanche Energy, ICE = 30A, L = 1mH, VDD = 50V	700	mJ
PD	Power Dissipation Total TC = 25°C	625	W
	Power Dissipation Derating TC > 25°C	5	W/°C
TJ	Operating Junction Temperature Range	-55 to 150	°C
TSTG	Storage Junction Temperature Range	-55 to 150	°C

Description

The FGK60N6S2D is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. FGK60N6S2D are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC FGK60N6S2D have been specially designed for:
• Power Factor Correction (PFC) circuits
• Full bridge topologies
• Half bridge topologies
• Push-Pull circuits
• Uninterruptible power supplies
• Zero voltage and zero current switching circuits
IGBT formerly Developmental Type TA49346 Diode formerly Developmental Type TA49393