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FDA50N50, FDA59N25, FDA59N30

Table of contents:
Info of FDA50N50
Info of FDA59N25
Info of FDA59N30

FDA50N50, FDA59N25, FDA59N30 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-247 D/C:06+

FDA50N50, FDA59N25, FDA59N30 Datasheet download

Five Points

Part Number: FDA50N50

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-247

D/C: 06+

Description: MOSFET N-CH 300V 59A TO-3P

Price Break

450

Unit Price

2.93931

Extended Price

1322.69

(All prices are in USD) Prices for reference only

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FDA50N50 Parameters

Technical/Catalog Information	FDA50N50
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	48A
Rds On (Max) @ Id, Vgs	105 mOhm @ 24A, 10V
Input Capacitance (Ciss) @ Vds	6460pF @ 25V
Power - Max	625W
Packaging	Tube
Gate Charge (Qg) @ Vgs	137nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDA50N50 FDA50N50

FDA50N50 General Description

These N-Channel enhancement mode power field effect transis-tors are produced using Fairchild's proprietary, planar stripe,DMOS technology.

This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effi-cient switched mode power supplies and active power factor correction.

FDA50N50 Maximum Ratings

Symbol	Parameter	FDH50N50/FDA50N50	Unit
V_DSS	Drain-Source Voltage	500	V
I_D	Drain Current - Continuous (T_C = 25) - Continuous (T_C = 100)	48 30.8	A A
I_DM	Drain Current - Pulsed (Note 1)	192	A
V_GSS	Gate-Source voltage	±20	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	1868	mJ
I_AR	Avalanche Current (Note 1)	48	A
E_AR	Repetitive Avalanche Energy (Note 1)	62.5	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
P_D	Power Dissipation (T_C = 25) - Derate above 25	625 5	W W/°C
T_J, T_STG	Operating and Storage Temperature Range	-55 to +150
T_L	Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds	300

FDA50N50 Features

* 48A, 500V, R_DS(on) = 0.105 @V_GS = 10 V
* Low gate charge ( typical 105 nC)
* Low C_rss ( typical 45 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

FDA59N25 Parameters

Technical/Catalog Information	FDA59N25
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	59A
Rds On (Max) @ Id, Vgs	49 mOhm @ 29.5A, 10V
Input Capacitance (Ciss) @ Vds	4020pF @ 25V
Power - Max	392W
Packaging	Tube
Gate Charge (Qg) @ Vgs	82nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDA59N25 FDA59N25

FDA59N25 General Description

These N-Channel enhancement mode power field effect transis-tors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effi-cient switched mode power supplies and active power factor correction.

FDA59N25 Maximum Ratings

Symbol	Parameter	FDA59N25	Unit
V_DSS	Drain-Source Voltage	250	V
V_{DS(Avalanche)}	Repetitive Avalanche Voltage (Note 1, 2)	300	V
I_D	Drain Current - Continuous (T_C = 25) - Continuous (T_C = 100)	59 35	A A
I_DM	Drain Current - Pulsed (Note 1)	236	A
V_GSS	Gate-Source voltage	±30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	1458	mJ
I_AR	Avalanche Current (Note 1)	59	A
E_AR	Repetitive Avalanche Energy (Note 1)	39.2	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
P_D	Power Dissipation (T_C = 25) - Derate above 25	392 3.2	W W/
T_J, T_STG	Operating and Storage Temperature Range	-55 to +150
T_L	Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds	300

FDA59N25 Features

* 59A, 250V, R_DS(on) = 0.049 @V_GS = 10 V
* Low gate charge (typical 63 nC)
* Low C_rss (typical 70 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

FDA59N30 Parameters

Technical/Catalog Information	FDA59N30
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	300V
Current - Continuous Drain (Id) @ 25° C	59A
Rds On (Max) @ Id, Vgs	56 mOhm @ 29.5A, 10V
Input Capacitance (Ciss) @ Vds	4670pF @ 25V
Power - Max	500W
Packaging	Tube
Gate Charge (Qg) @ Vgs	100nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDA59N30 FDA59N30

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