FDA032N08

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 75 V
Package / Case : TO-3PN
Resistance Drain-Source RDS (on) : 0.0032 Ohms
Continuous Drain Current : 235 A


Specifications

      

Product	Product status	Eco Status	Pricing*	Package type	Leads	Packing method	Package Drawing	Package Marking Convention**
FDA032N08	Full Production	RoHS Compliant	$4.26	TO-3PN	3	RAIL	N/A	Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &E&3 (3-Digit Date Code) Line 2: FDA Line 3: 032N08

* Fairchild 1,000 piece Budgetary Pricing

** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product FDA032N08 is available. Click here for more information .

Description

This N-Channel MOSFET FDA032N08 is produced using Fairchild Semiconductor?sadcanced PowerTrench process that has been especiallytailored to minimize the on-state resistance and yetmaintain superior switching performance.

Parameters:

Technical/Catalog Information	FDA032N08
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	75V
Current - Continuous Drain (Id) @ 25° C	120A
Rds On (Max) @ Id, Vgs	3.2 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds	15160pF @ 25V
Power - Max	375W
Packaging	Tube
Gate Charge (Qg) @ Vgs	220nC @ 10V
Package / Case	TO-3PN
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDA032N08 FDA032N08