Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Drain-Source Breakdown Voltage
: 500 V
Resistance Drain-Source RDS (on)
: 0.105 Ohms
Continuous Drain Current
: 48 A
Package / Case
: TO-3P
Features: * 48A, 500V, RDS(on) = 0.105 @VGS = 10 V
* Low gate charge ( typical 105 nC)
* Low Crss ( typical 45 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capabilitySpecifications
| Symbol |
Parameter |
FDH50N50/FDA50N50 |
Unit |
| VDSS |
Drain-Source Voltage |
500 |
V |
| ID |
Drain Current - Continuous (TC = 25)
- Continuous (TC = 100) |
48
30.8 |
A
A
|
| IDM |
Drain Current - Pulsed (Note 1) |
192 |
A |
| VGSS |
Gate-Source voltage |
±20
|
V
|
| EAS |
Single Pulsed Avalanche Energy (Note 2) |
1868 |
mJ |
| IAR |
Avalanche Current (Note 1) |
48 |
A |
| EAR |
Repetitive Avalanche Energy (Note 1) |
62.5 |
mJ
|
| dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
| PD |
Power Dissipation (TC = 25)
- Derate above 25 |
625
5 |
W
W/°C |
| TJ, TSTG |
Operating and Storage Temperature Range |
-55 to +150 |
|
| TL |
Maximum Lead Temperature for Soldering Purpose,
1/8" from Case for 5 Seconds |
300 |
|
Description These FDA50N50 N-Channel enhancement mode power field effect transis-tors are produced using Fairchild's proprietary, planar stripe,DMOS technology.
This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode. These devices FDA50N50 are well suited for high effi-cient switched mode power supplies and active power factor correction.
Parameters: | Technical/Catalog Information | FDA50N50 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 48A |
| Rds On (Max) @ Id, Vgs | 105 mOhm @ 24A, 10V |
| Input Capacitance (Ciss) @ Vds | 6460pF @ 25V |
| Power - Max | 625W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 137nC @ 10V |
| Package / Case | TO-3P |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDA50N50
FDA50N50
|
FDA50N50 Data Sheet
