FDA59N25

MOSFET 250V N-Ch MOSFET

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SeekIC No. : 00148223 Detail

FDA59N25: MOSFET 250V N-Ch MOSFET

floor Price/Ceiling Price

US $ 1.42~1.93 / Piece | Get Latest Price
Part Number:
FDA59N25
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.93
  • $1.73
  • $1.58
  • $1.42
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 59 A
Resistance Drain-Source RDS (on) : 0.049 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-3PN Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 59 A
Package / Case : TO-3PN
Resistance Drain-Source RDS (on) : 0.049 Ohms


Features:

* 59A, 250V, RDS(on) = 0.049@VGS= 10 V
* Low gate charge (typical 63 nC)
* Low Crss(typical 70 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability





Specifications

Symbol Parameter FDA59N25 Unit
VDSS Drain-Source Voltage 250 V
VDS(Avalanche)
Repetitive Avalanche Voltage (Note 1, 2)
300 V
ID Drain Current - Continuous (TC = 25)
- Continuous (TC = 100)
59
35
A
A
IDM
Drain Current - Pulsed (Note 1)
236 A
VGSS Gate-Source voltage ±30
V
EAS
Single Pulsed Avalanche Energy (Note 2)
1458 mJ
IAR Avalanche Current (Note 1) 59 A
EAR Repetitive Avalanche Energy (Note 1) 39.2 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25)
- Derate above 25
392
3.2
W
W/
TJ, TSTG Operating and Storage Temperature Range -55 to +150
TL Maximum Lead Temperature for Soldering Purpose,
1/8" from Case for 5 Seconds
300




Product Product status Eco Status Package type Leads Packing method Package Drawing Package Marking Convention**
FDA59N25 Full Production RoHS Compliant TO-3PN 3 RAIL TBD Line 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
&E&3 (3-Digit Date Code)
Line 2: FDA Line 3: 59N25
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product FDA59N25 is available. Click here for more information .





Description

These FDA59N25 N-Channel enhancement mode power field effect transis-tors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode. These devices FDA59N25 are well suited for high effi-cient switched mode power supplies and active power factor correction.






Parameters:

Technical/Catalog InformationFDA59N25
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25° C59A
Rds On (Max) @ Id, Vgs49 mOhm @ 29.5A, 10V
Input Capacitance (Ciss) @ Vds 4020pF @ 25V
Power - Max392W
PackagingTube
Gate Charge (Qg) @ Vgs82nC @ 10V
Package / CaseTO-3P
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDA59N25
FDA59N25



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