ECP200D-G (P/B), ECP200G, ECP200G-G Selling Leads, Datasheet
MFG:WJ Package Cooled:QFN 16P D/C:06+
ECP200D-G (P/B), ECP200G, ECP200G-G Datasheet download
Part Number: ECP200D-G (P/B)
MFG: WJ
Package Cooled: QFN 16P
D/C: 06+
MFG:WJ Package Cooled:QFN 16P D/C:06+
ECP200D-G (P/B), ECP200G, ECP200G-G Datasheet download
MFG: WJ
Package Cooled: QFN 16P
D/C: 06+
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PDF/DataSheet Download
Datasheet: ECP050G
File Size: 591783 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: ECP050G
File Size: 591783 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: ECP050G
File Size: 591783 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
The AH312 / ECP200 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance for various narrowband-tuned application circuits with up to +49 dBm OIP3 and +33 dBm of compressed 1dB power. It is housed in a lead-free/green/RoHS-compliant SOIC-8 package. All devices are 100% RF and DC tested.
The AH312 / ECP200 is targeted for use as a driver amplifier in wireless infrastructure where high linearity and medium power is required. An internal active bias allows the AH312 to maintain high linearity over temperature and operate directly off a single +5V supply. This combination makes the device an excellent candidate for transceiver line cards in current and next generation multi-carrier 3G base stations.
Parameter | Rating |
Operating Case Temperature Storage Temperature RF Input Power (continuous) Device Voltage Device Current Device Power Junction Temperature |
-40 to +85 °C -65 to +150 °C +28 dBm +8 V 1400 mA 8 W +250 °C |