Features: • 800 1000 MHz• +28.5 dBm P1dB• +44 dBm Output IP3• 18 dB Gain @ 900 MHz• Single Positive Supply (+5V)• Available in SOIC-8 or 16pin 4mm QFN packageApplication• Final stage amplifiers for Repeaters• Mobile InfrastructurePinoutSpecification...
ECP052: Features: • 800 1000 MHz• +28.5 dBm P1dB• +44 dBm Output IP3• 18 dB Gain @ 900 MHz• Single Positive Supply (+5V)• Available in SOIC-8 or 16pin 4mm QFN packageApp...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Operating Case Temperature -40 to +85 °C
Storage Temperature -65 to +150 °C
RF Input Power (continuous) +28 dBm
Device Voltage +8 V
Device Current 400 mA
Device Power 2 W
The ECP052 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance for various narrowband-tuned application circuits with up to +44 dBm OIP3 and +28.5 dBm of compressed 1dB power. It is housed in an industry standard SOIC-8 or 16-pin 4x4mm QFN SMT package. All devices are 100% RF and DC tested.
The ECP052 is targeted for use as a driver amplifier in wireless infrastructure where high linearity and medium power is required. An internal active bias allows the ECP052 to maintain high linearity over temperature and operate directly off a single +5V supply. This combination makes the device an excellent candidate for transceiver line cards in current and next generation
multi-carrier 3G base stations.