Features: • 400 2300 MHz• +33 dBm P1dB• +51 dBm Output IP3• 18 dB Gain @ 900 MHz• 11 dB Gain @ 1960 MHz• Single Positive Supply (+5V)• Lead-free/green/RoHS-compliant SOIC-8 SMT Pkg.Application• Final stage amplifiers for Repeaters• Mobile Infr...
ECP200G: Features: • 400 2300 MHz• +33 dBm P1dB• +51 dBm Output IP3• 18 dB Gain @ 900 MHz• 11 dB Gain @ 1960 MHz• Single Positive Supply (+5V)• Lead-free/green/RoHS...
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Parameter | Rating |
Operating Case Temperature Storage Temperature RF Input Power (continuous) Device Voltage Device Current Device Power Junction Temperature |
-40 to +85 °C -65 to +150 °C +28 dBm +8 V 1400 mA 8 W +250 °C |
The AH312 / ECP200 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance for various narrowband-tuned application circuits with up to +49 dBm OIP3 and +33 dBm of compressed 1dB power. It is housed in a lead-free/green/RoHS-compliant SOIC-8 package. All devices are 100% RF and DC tested.
The AH312 / ECP200 is targeted for use as a driver amplifier in wireless infrastructure where high linearity and medium power is required. An internal active bias allows the AH312 to maintain high linearity over temperature and operate directly off a single +5V supply. This combination makes the device an excellent candidate for transceiver line cards in current and next generation multi-carrier 3G base stations.