ECP200G

Features: • 400 2300 MHz• +33 dBm P1dB• +51 dBm Output IP3• 18 dB Gain @ 900 MHz• 11 dB Gain @ 1960 MHz• Single Positive Supply (+5V)• Lead-free/green/RoHS-compliant SOIC-8 SMT Pkg.Application• Final stage amplifiers for Repeaters• Mobile Infr...

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ECP200G Picture
SeekIC No. : 004333186 Detail

ECP200G: Features: • 400 2300 MHz• +33 dBm P1dB• +51 dBm Output IP3• 18 dB Gain @ 900 MHz• 11 dB Gain @ 1960 MHz• Single Positive Supply (+5V)• Lead-free/green/RoHS...

floor Price/Ceiling Price

Part Number:
ECP200G
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/12/25

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Product Details

Description



Features:

• 400 2300 MHz
• +33 dBm P1dB
• +51 dBm Output IP3
• 18 dB Gain @ 900 MHz
• 11 dB Gain @ 1960 MHz
• Single Positive Supply (+5V)
• Lead-free/green/RoHS-compliant SOIC-8 SMT Pkg.



Application

• Final stage amplifiers for Repeaters
• Mobile Infrastructure
• Defense / Homeland Security



Pinout

  Connection Diagram


Specifications

Parameter Rating
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Device Power
Junction Temperature
-40 to +85 °C
-65 to +150 °C
+28 dBm
+8 V
1400 mA
8 W
+250 °C



Description

The AH312 / ECP200 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance for various narrowband-tuned application circuits with up to +49 dBm OIP3 and +33 dBm of compressed 1dB power. It is housed in a lead-free/green/RoHS-compliant SOIC-8 package. All devices are 100% RF and DC tested.

The AH312 / ECP200 is targeted for use as a driver amplifier in wireless infrastructure where high linearity and medium power is required. An internal active bias allows the AH312 to maintain high linearity over temperature and operate directly off a single +5V supply. This combination makes the device an excellent candidate for transceiver line cards in current and next generation multi-carrier 3G base stations.




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