BULB49DT4, BULD1101ET4, BULD118D1 Selling Leads, Datasheet
MFG:ST Package Cooled:D2PAK D/C:08+
BULB49DT4, BULD1101ET4, BULD118D1 Datasheet download
Part Number: BULB49DT4
MFG: ST
Package Cooled: D2PAK
D/C: 08+
MFG:ST Package Cooled:D2PAK D/C:08+
BULB49DT4, BULD1101ET4, BULD118D1 Datasheet download
MFG: ST
Package Cooled: D2PAK
D/C: 08+
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: BULB49DT4
File Size: 258670 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BULD1101ET4
File Size: 235100 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BUL1101E
File Size: 240354 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.
Symbol | Parameter | Value | Unit |
VCES | Collector-Emitter Voltage (VBE = 0) | 1100 | V |
VCEO | Collector-Emitter Voltage (IB = 0) | 450 | V |
VEBO | Emitter-Base Voltage (IC = 0) | 12 | V |
IC | Collector Current | 3 | A |
ICM | Collector Peak Current (tp <5 ms) | 6 | A |
IB | Base Current | 1.5 | A |
IBM | Base Peak Current (tp <5 ms) | 3 | A |
Ptot | Total Dissipation at Tc = 25 | 35 | W |
Tstg | Storage Temperature | -65 to 150 | |
Tj | Max. Operating Junction Temperature | 150 |