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The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.
Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast.
BUL742C Maximum Ratings
Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VBE = 0)
1050
V
VCEO
Collector-Emitter Voltage (IB = 0)
400
V
VEBO
Emitter-Base Voltage (IC = 0, IB < 2 A, tp < 10 ms)
V(BR)EBO
V
IC
Collector Current
4
A
ICM
Collector Peak Current (tp < 5 ms)
8
A
IB
Base Current
2
A
IBM
Base Peak Current (tp < 5 ms)
4
A
Ptot
Total Dissipation at Tc = 25
70
W
Tstg
Storage Temperature
-65 to 150
Tj
Max. Operating Junction Temperature
150
BUL742C Features
· HIGH VOLTAGE CAPABILITY · LOW SPREAD OF DYNAMIC PARAMETERS · MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION · VERY HIGH SWITCHING SPEED
BUL742C Typical Application
· ELECTRONIC BALLAST FOR FLUORESCENT LIGHTING · SWITCH MODE POWER SUPPLIES