BUL49A, BUL49B, BUL50A Selling Leads, Datasheet
MFG:ST/MOT Package Cooled:ST D/C:04+
BUL49A, BUL49B, BUL50A Datasheet download
Part Number: BUL49A
MFG: ST/MOT
Package Cooled: ST
D/C: 04+
BUL49A, BUL49B, BUL50A
- Table of contents:
Info of BUL49A
Info of BUL49B
Info of BUL50A
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About BUL49A
PDF/DataSheet Download
Datasheet: BUL49A
File Size: 16759 KB
Manufacturer: SEME-LAB [Seme LAB]
Download : Click here to Download
About BUL1101E
PDF/DataSheet Download
Datasheet: BUL1101E
File Size: 240354 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
About BUL50A
PDF/DataSheet Download
Datasheet: BUL50A
File Size: 29901 KB
Manufacturer: SEME-LAB [Seme LAB]
Download : Click here to Download
BUL49A Maximum Ratings
| VCBO | Collector-Base Voltage(IE=0) | 600V |
| VCEO | Collector-Emitter Voltage(IB=0) | 300V |
| VEBO | Emitter-Base Voltage(IC=0) | 10V |
| IC | Continuous Collector Current | 25A |
| IC(PK) | Peak Collector Current | 40A |
| IPtot | Base Current | 200W |
| Tstg | Total Dissipation at Tcase=25 | -55 to +175 |
| Rth | Operating and Storage Temperature Range | Max.0.7W |
BUL49A Features
Multi-base for efficient energy distributio across the chip resulting in significantly improved switching and energy ratings across full temperature range.
Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
Triple Guard Rings for improved control of high voltages.
Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
Triple Guard Rings for improved control of high voltages.
BUL50A General Description
• SEMEFAB DESIGNED AND DIFFUSED DIE
• HIGH VOLTAGE
• FAST SWITCHING
• HIGH ENERGY RATING
• EFFICIENT POWER SWITCHING
• MILITARY AND HIREL VERSIONS AVAILABLE IN METAL AND CERAMIC SURFACE MOUNT PACKAGES
• HIGH VOLTAGE
• FAST SWITCHING
• HIGH ENERGY RATING
• EFFICIENT POWER SWITCHING
• MILITARY AND HIREL VERSIONS AVAILABLE IN METAL AND CERAMIC SURFACE MOUNT PACKAGES
BUL50A Maximum Ratings
| VCBO | Collector-Base Voltage(IE=0) | 1000V |
| VCEO | Collector-Emitter Voltage(IB=0) | 500V |
| VEBO | Emitter-Base Voltage(IC=0) | 10V |
| IC | Continuous Collector Current | 15A |
| IC(PK) | Peak Collector Current | 30A |
| IB | Base Current | 5A |
| Ptot | Total Dissipation at Tcase=25 | 125W |
| Tstg | Operating and Storage Temperature Range | -55 to +175 |
BUL50A Features
• Multibase for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
• Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
• Triple Guard Rings for improved control of high voltages.
• Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
• Triple Guard Rings for improved control of high voltages.
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