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The BUL44D2 is state-of-a High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window. Main features: *Low Base Drive Requirement *High Peak DC Current Gain (55 Typical) @ IC = 100 mA *Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread *Integrated Collector¤CEmitter Free Wheeling Diod *Fully Characterized and Guaranteed Dynamic VCE(sat) *"6 Sigma" Process Providing Tight and Reproductible Parameter Sprea It's characteristics make it also suitable for PFC application.
BUL45 Parameters
Technical/Catalog Information
BUL45
Vendor
ON Semiconductor
Category
Discrete Semiconductor Products
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
400V
Current - Collector (Ic) (Max)
5A
Power - Max
75W
DC Current Gain (hFE) (Min) @ Ic, Vce
14 @ 300mA, 5V
Vce Saturation (Max) @ Ib, Ic
250mV @ 200mA, 1A
Frequency - Transition
12MHz
Current - Collector Cutoff (Max)
100A
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Packaging
Tube
Lead Free Status
Contains Lead
RoHS Status
RoHS Non-Compliant
Other Names
BUL45 BUL45 BUL45OS ND BUL45OSND BUL45OS
BUL45 Maximum Ratings
Rating
Symbol
BUL45
BUL45F
Unit
Collector-Emitter Sustaining Voltag
VCEO
400
Vdc
Collector-Emitter Breakdown Voltag
VCES
700
Vdc
Emitter-Base Voltag
VEBO
9.0
Vdc
Collector Current-Continuous - Peak(1)
IC ICM
5.0
10
Adc
Base Current
IB
20
Adc
RMS Isolated Voltage(2)Test No. 1 Per Fig. 22a (for 1 sec, R.H. < 30%,T = 25) Test No. 1 Per Fig. 22a Test No. 2 Per Fig. 22b Test No. 3 Per Fig. 22c
VISOL
-
-
-
4500
3500
1500
Volts
Total Device Dissipation Derate above 25 (TC=25)
PD
75
0.6
35
0.28
Watts W/
Operating and Storage Temperature
Tj , Tstg
-65 to 150
BUL45 Features
*Designed for use in electronic ballast (light ballast) and in Switchmode Power supplies up to 50 Watts. Main features include: *Improved Efficiency Due to: -Low Base Drive Requirements (High and Flat DC Current Gain hFE )
-" Low Power Losses (On¤CState and Switching Operations) -" Fast Switching:tfi = 100 ns (typ) and tsi = 3.2us (typ) @ IC = 2.0 A, IB1= IB2 = 0.4 A *Full Characterization at 125 *Tight Parametric Distributions Consistent Lot¤Cto¤CL *BUL45F, Case 221D, is UL Recognized at 3500 V : File #E69369 RMS