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The BUL213 is manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high performance. It uses a Hollow Emitter structure to enhance switching speeds.
The BUL series is designed for use in lighting applications and low costs witch-modepower supplies.
The BUL216 is manufactured using high voltage Multiepitaxial Mesatechnologyforcost-effective high performance.It uses a Hollow Emitter structure toenhance switching speeds. The BUL series is designed fo ruse in lighting applications andl ow costs witch-mode power supplies.
BUL216 Maximum Ratings
Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VBE= 0)
1600
V
VCEO
Collector-Emitter Voltage (IB= 0)
800
V
VEBO
Emitter-Base Voltage (IC = 0)
9
V
IC
Collector Current
4
A
ICM
Collector Peak Current (tP<5 ms)
6
A
IB
Base Current
2
A
IBM
Base Peak Current (tP<5 ms)
4
A
Ptot
Total Dissipation at Tc = 25
90
W
Tstg
Storage Temperature
-65 to 150
Tj
Max. Operating Junction Temperature
150
BUL216 Features
*SGS-THOMSONPREFERREDSALESTYPE *NPNTRANSISTOR *HIGHVOLTAGECAPABILITY *VERYHIGHSWITCHINGSPEED *HIGHOPERATINGJUNCTION TEMPERATURE *HIGHRUGGEDNESS