BLF546, BLF547, BLF548 Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:TO-62 D/C:04+
BLF546, BLF547, BLF548 Datasheet download
Part Number: BLF546
MFG: PHILIPS
Package Cooled: TO-62
D/C: 04+
BLF546, BLF547, BLF548
- Table of contents:
Info of BLF546
Info of BLF547
Info of BLF548
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About BLF546
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Datasheet: BLF546
File Size: 92440 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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About BLF547
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Datasheet: BLF547
File Size: 126169 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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About BLF548
PDF/DataSheet Download
Datasheet: BLF548
File Size: 119399 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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BLF546 General Description
The BLF546 is a type of UHF push-pull powewr mos transistor.Silicon N-channel enhancement mode vertical D-MOS push-pull transistor applied for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT268 balanced flange envelope, with two ceramic caps. The mounting flange offers the common source connection for the transistors.
The BLF546 has the following features:(1)High power gain;(2)Easy power control;(3)Good thermal stability;(4)Gold metallization ensures,excellent reliability;(5)Designed for broadband operation.
It also has some outstanding limiting values(In accordance with the absolute maximum System ,Per transistor secti on unless otherwise specified.) and electrical characteristics(Tj=25°C).Absolute maximum ratings:(1):drain-source voltage is 65 V max;(2):gate-source voltage is 20 V max;(3):drain current is 9 A max;(4): total power dissipation is 145 W max(up to Tmb = 25 °C; total device;both sections equally loaded);(5): storage temperature is 65 to 150 °C;(6): junction temperature is 200 °C max.characteristics:(1):drain-source breakdown voltage is 65 V min when VGS is 0 and ID is 20 mA;(2):drain-source leakage current is 2 mA max when VGS is 0 and VDS is 28 V;(3): gate-sour ce leakage current is 1 mA max when ±VGS is 20 V and VDS is 0 ;(4): gate-source threshold voltage is 1 V min and 4 V max when ID is 80 mA and VDS is 10 V;(5):forward transconductance is 1.2 s min and 1.7 s typ when ID is 2.4 A and VDS is 10 V;(6):drain-source on-state resistance is 0.4 typ and 0.6 max when ID is 2.4 An and VGS is 10 V;(7):on-state drain current is 10 A typ when VGS is 15 V and VDS is 10 V;(8): input capacitance is 60 pF when VGS is 0 , VDS is 28 V and f is 1 MHz;(9): output capacitance is 46 pF when VGS is 0, VDS is 28 V and f is 1 MHz.etc.
BLF547 General Description
Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range.
The transistor is encapsulated in a 4-lead, SOT262A2 balanced flange envelope, with two ceramic caps. The mounting flange provides the common source connection for the transistors.
The transistor is encapsulated in a 4-lead, SOT262A2 balanced flange envelope, with two ceramic caps. The mounting flange provides the common source connection for the transistors.
BLF547 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDS | drain-source voltage | 65 | V | ||
| VGS | gate-source voltage | 20 | V | ||
| ID | DC drain current | 9 | A | ||
| Ptot | total power dissipation | up to Tmb =25 °C; total device; both sections equally loaded |
225 | W | |
| Tstg | storage temperature | -65 | 150 | C | |
| Tj | junction temperature | 200 | C | ||
BLF547 Features
* High power gain
* Easy power control
* Good thermal stability
* Gold metallization ensures excellent reliability
* Designed for broadband operation.
* Easy power control
* Good thermal stability
* Gold metallization ensures excellent reliability
* Designed for broadband operation.
BLF547 Connection Diagram
BLF548 General Description
The BLF548 has five features.(1)high power gain.(2)easy power control.(3)good thermal stability.(4)gold metallization ensures excellent reliability.(5)designed for broadband operation.
The BLF548 is capable of withstanding a load mismatch corresponding to VSWR = 10: 1 through all phases under the following conditions: VDS = 28 V; f = 500 MHz at rated output power.The BLF548 has two thermal characteristics.(1):the symbol is Rth j-mb,the parameter is thermal resistance from junction to mounting base,the conditions is Tmb = 25 ; Ptot = 330 W; total device;both sections equally loaded,the value is 0.5,the unit is k/W;(2):the symbol is Rth mb-h,the parameter is thermal resistance from mounting base to heatsink,the conditions is total device; both sections equally loaded,the value is 0.15,the unit is k/W;Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range.The transistor is encapsulated in a 4-lead, SOT262A2 balanced flange package, with two ceramic caps. The mounting flange provides the common source connection for the transistors.This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information,refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
BLF548 Connection Diagram
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