BLF1047 Selling Leads, Price trend, BLF1047 DataSheet download, circuit diagram from SeekIC.com

Features: * High power gain* Easy power control* Excellent ruggedness* Source on underside eliminates DC isolators, reducing common mode inductance* Designed for broadband operation (HF to 1 GHz).Application* Communication transmitter applications in the UHF frequency range.PinoutSpecifications ...

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SeekIC No. : 004300534 Detail

BLF1047: Features: * High power gain* Easy power control* Excellent ruggedness* Source on underside eliminates DC isolators, reducing common mode inductance* Designed for broadband operation (HF to 1 GHz).Ap...

BLF1047 Data Sheet

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Part Number:: BLF1047
Supply Ability:: 5000

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1~5000

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Negotiable

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Upload time: 2024/12/21

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Recent History
What is this?

BLF1043 evaluate
Transistors RF MOSFET Power RF LDMOS 10W UHF
BLF1043,112 evaluate
US $18.88 - 20.21 / Piece

Transistors RF MOSFET Power RF LDMOS 10W UHF
BLF1043,135 evaluate
US $24.91 - 24.91 / Piece

Transistors RF MOSFET Power TRANSISTOR UHF PWR LDMOS

Product Details

Description

Features:

* High power gain
* Easy power control
* Excellent ruggedness
* Source on underside eliminates DC isolators, reducing common mode inductance
* Designed for broadband operation (HF to 1 GHz).

Application

* Communication transmitter applications in the UHF frequency range.

Pinout

Connection Diagram

Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VDS	drain-source voltage			65	V
VGS	gate-source voltage			±20	V
ID	DC drain current			9	A
Tstg	storage temperature		-65	150	C
Tj	junction temperature			200	C

Description

Silicon N-channel enhancement mode lateral D-MOS transistor BLF1047 encapsulated in a 2-lead flange package (SOT541A) with a ceramic cap. The common source is connected to the mounting flange.

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BLF1047

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