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BLF175/B PBF, BLF176, BLF177

Table of contents:
Info of BLF175/B PBF
Info of BLF176
Info of BLF177

BLF175/B PBF, BLF176, BLF177 Selling Leads, Datasheet

MFG:PHILIPS Package Cooled:TO-59 D/C:04+

BLF175/B PBF, BLF176, BLF177 Datasheet download

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Part Number: BLF175/B PBF

MFG: PHILIPS

Package Cooled: TO-59

D/C: 04+

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BLF177 General Description

The BLF177 is a type of HF/VHF push-pull power MOS transistor,which is designed for industrial and military applica tions in the HF/VHF frequency range.The transistor is encapsulated in a 4-lead, SOT121 flange envelope, with a cer amic cap. All leads are separated from the flange. A marking code, showing gate-source voltage (VGS) information is offered for matched pair applications. Refer to the 'General' section for further information.

Features of the BLF177 are:(1)high power gain;(2)low intermodulation distortion;(3)easy power control;(4)good the rmal stability;(5)withstands full load mismatch.

The limiting values and characteristics(Tj = 25 °C unless otherwise specified) of the BLF177 can be summarized as:(1):drain-source voltage is 110 V;(2): gate-source voltage is±20 V;(3):drain current (DC) is 16 A;(4): total power dissipation is 220W when Tmb is 25°C;(5):storage temperature ranges from-65°C to 150 °C;(6):junction tem perature is 200°C.Characteristics:(1):drain-source breakdown voltage is 110V min when VGS is 0 and ID is 50 mA;(2):drain-source leakage current is 2.5mA max when VGS is 0 and VDS is 5V;(3):gate-source leakage current is 1uA when VGS is±20 V and VDS is 0;(4):gate-source threshold voltage is 2V min and 4.5V max when ID is 50 mA and VDS is 10 V;(5):gate-source voltage difference of matched pairs is 100mV max when ID is 50 mA and VDS is 10 V;(6):forward transconductance is 4.5S min and 6.2S typ when IDis 5 A and VDS is 10 V;(7)drain-source on-state resis tance is 0.2 typ and 0.3 max when ID is 5 A and VGS = 10V;(8):on-state drain current os 25A typ when VGS is 10 V and VDS is 10 V.

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