BLF1049, BLF145, BLF145112 Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:SOT-502A D/C:N/A
BLF1049, BLF145, BLF145112 Datasheet download
Part Number: BLF1049
MFG: PHILIPS
Package Cooled: SOT-502A
D/C: N/A
BLF1049, BLF145, BLF145112
- Table of contents:
Info of BLF1049
Info of BLF145
Info of BLF145112
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About BLF1049
PDF/DataSheet Download
Datasheet: BLF1049
File Size: 113389 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLF145
PDF/DataSheet Download
Datasheet: BLF145
File Size: 91065 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLF0810-180
PDF/DataSheet Download
Datasheet: BLF0810-180
File Size: 120279 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
BLF1049 General Description
125 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.
BLF1049 Maximum Ratings
| SYMBOL | PARAMETER | MIN. | MAX. | UNIT |
| VDS | drain-source voltage | - | 75 | V |
| VGS | gate-source voltage | - | ±15 | V |
| Tstg | storage temperature | -65 | 150 | °C |
| Tj | junction temperature | - | 200 | °C |
BLF1049 Features
` Typical performance at a supply voltage of 27 V:
1-tone CW; IDQ = 1000 mA
Output power = 125 W
Gain = 16.5 dB
Efficiency = 54%
EDGE output power = 45 W (AV)
ACPR400 = -64 dBc at 400 kHz (EDGE; IDQ = 750 mA)
EVM = 2% rms (AV) (EDGE; IDQ = 750 mA)
` Easy power control
` Excellent ruggedness
` High power gain
` Excellent thermal stability
` Designed for broadband operation (800 to 1000 MHz)
` Internally matched for ease of use.
1-tone CW; IDQ = 1000 mA
Output power = 125 W
Gain = 16.5 dB
Efficiency = 54%
EDGE output power = 45 W (AV)
ACPR400 = -64 dBc at 400 kHz (EDGE; IDQ = 750 mA)
EVM = 2% rms (AV) (EDGE; IDQ = 750 mA)
` Easy power control
` Excellent ruggedness
` High power gain
` Excellent thermal stability
` Designed for broadband operation (800 to 1000 MHz)
` Internally matched for ease of use.
BLF1049 Typical Application
· RF power amplifier for GSM, EDGE and CDMA base stations and multicarrier applications in the 800 to 1000 MHz frequency range.
BLF1049 Connection Diagram
BLF145 General Description
Silicon N-channel enhancement mode vertical D-MOS transistor designed for SSB transmitter applications in the HF frequency range. The transistor is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are
isolated from the flange. Matched gate-source voltage (VGS) groups are available on request.
isolated from the flange. Matched gate-source voltage (VGS) groups are available on request.
BLF145 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDS | drain-source voltage | 65 | V | ||
| VGS | gate-source voltage | 20 | V | ||
| ID | DC drain current | 6 | A | ||
| Ptot | total power dissipation | up to Tmb = 25 °C | 68 | W | |
| Tstg | storage temperature | -65 | 150 | C | |
| Tj | junction temperature | 200 | C | ||
BLF145 Features
* High power gain
* Low noise figure
* Good thermal stability
* Withstands full load mismatch.
* Low noise figure
* Good thermal stability
* Withstands full load mismatch.
BLF145 Connection Diagram
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