BLF1046

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 65 V
Packaging : Tube
Output Power : 45 W
Gate-Source Breakdown Voltage : +/- 20 V
Frequency : 1 GHz
Package / Case : SOT-467C
Continuous Drain Current : 4.5 A
Gain : 14 dB at 960 MHz


Features:

* High power gain
* Easy power control
* Excellent ruggedness
* Source on underside eliminates DC isolators, reducing common mode inductance
* Designed for broadband operation (HF to 1 GHz).


Application

* Communication transmitter applications in the UHF frequency range.


Pinout




Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VDS	drain-source voltage			65	V
VGS	gate-source voltage			±20	V
ID	DC drain current			4.5	A
Tstg	storage temperature		-65	150	C
Tj	junction temperature			200	C

Description

Silicon N-channel enhancement mode lateral D-MOS transistor BLF1046 encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange.