BLF146, BLF147, BLF175 Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:TO-59 D/C:.
BLF146, BLF147, BLF175 Datasheet download
Part Number: BLF146
MFG: PHILIPS
Package Cooled: TO-59
D/C: .
BLF146, BLF147, BLF175
- Table of contents:
Info of BLF146
Info of BLF147
Info of BLF175
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About BLF0810-180
PDF/DataSheet Download
Datasheet: BLF0810-180
File Size: 120279 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLF147
PDF/DataSheet Download
Datasheet: BLF147
File Size: 86506 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLF175
PDF/DataSheet Download
Datasheet: BLF175
File Size: 141822 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
BLF147 General Description
Silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range.
The transistor is encapsulated in a 4-lead, SOT121 flange envelope, with a ceramic cap. All leads are isolated
from the flange.
A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to 'General' section for further information.
BLF147 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDS | drain-source voltage | 65 | V | ||
| VGS | gate-source voltage | 20 | V | ||
| ID | DC drain current | 25 | A | ||
| Ptot | total power dissipation | up to Tmb = 25 C; total device;both sections equally loaded | 220 | W | |
| Tstg | storage temperature | -65 | 150 | C | |
| Tj | junction temperature | 200 | C | ||
BLF147 Features
· High power gain
· Low intermodulation distortion
· Easy power control
· Good thermal stability
· Withstands full load mismatch.
· Low intermodulation distortion
· Easy power control
· Good thermal stability
· Withstands full load mismatch.
BLF175 General Description
Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the HF/VHF frequency range.
The transistor has a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange.
A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer
to the 'General' section for further information.
The transistor has a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange.
A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer
to the 'General' section for further information.
BLF175 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDS | drain-source voltage | 110 | V | ||
| VGS | gate-source voltage | 20 | V | ||
| ID | DC drain current | 4 | A | ||
| Ptot | total power dissipation | up to Tmb = 25 °C | 68 | W | |
| Tstg | storage temperature | -65 | 150 | C | |
| Tj | junction temperature | 200 | C | ||
BLF175 Features
* High power gain
* Low intermodulation distortion
* Easy power control
* Good thermal stability
* Withstands full load mismatch
* Gold metallization ensures excellent reliability.
* Low intermodulation distortion
* Easy power control
* Good thermal stability
* Withstands full load mismatch
* Gold metallization ensures excellent reliability.
BLF175 Connection Diagram
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