BLF521, BLF522, BLF542 Selling Leads, Datasheet
MFG:PHILIPS D/C:00+
BLF521, BLF522, BLF542
- Table of contents:
Info of BLF521
Info of BLF522
Info of BLF542
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About BLF521
PDF/DataSheet Download
Datasheet: BLF521
File Size: 92698 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLF522
PDF/DataSheet Download
Datasheet: BLF522
File Size: 73666 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLF542
PDF/DataSheet Download
Datasheet: BLF542
File Size: 104140 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
BLF521 General Description
Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range.
The transistor is encapsulated in a 4-lead, SOT172D studless envelope, with a ceramic cap. All leads are isolated from the mounting base.
The transistor is encapsulated in a 4-lead, SOT172D studless envelope, with a ceramic cap. All leads are isolated from the mounting base.
BLF521 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDS | drain-source voltage | 40 | V | ||
| VGS | gate-source voltage | 20 | V | ||
| ID | DC drain current | 1 | A | ||
| Ptot | total power dissipation | up to Tmb =25 °C | 10 | W | |
| Tstg | storage temperature | -65 | 150 | C | |
| Tj | junction temperature | 200 | C | ||
BLF521 Features
* High power gain
* Easy power control
* Gold metallization
* Good thermal stability
* Withstands full load mismatch
* Designed for broadband operation.
* Easy power control
* Gold metallization
* Good thermal stability
* Withstands full load mismatch
* Designed for broadband operation.
BLF521 Connection Diagram
BLF522 General Description
Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range.
The transistor is encapsulated in a 6-lead, SOT171 flange envelope, with a ceramic cap. All leads are isolated from the flange.
The transistor is encapsulated in a 6-lead, SOT171 flange envelope, with a ceramic cap. All leads are isolated from the flange.
BLF522 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDS | drain-source voltage | 40 | V | ||
| VGS | gate-source voltage | 20 | V | ||
| ID | DC drain current | 1.8 | A | ||
| Ptot | total power dissipation | up to Tmb =25 °C | 20 | W | |
| Tstg | storage temperature | -65 | 150 | C | |
| Tj | junction temperature | 200 | C | ||
BLF522 Features
* High power gain
* Easy power control
* Gold metallization
* Good thermal stability
* Withstands full load mismatch
* Designed for broadband operation.
* Easy power control
* Gold metallization
* Good thermal stability
* Withstands full load mismatch
* Designed for broadband operation.
BLF522 Connection Diagram
BLF542 General Description
Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the UHF frequency range.
The transistor is encapsulated in a 6-lead, SOT171 flange envelope, with a ceramic cap. All leads are isolated from the flange.
The transistor is encapsulated in a 6-lead, SOT171 flange envelope, with a ceramic cap. All leads are isolated from the flange.
BLF542 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDS | drain-source voltage | 60 | V | ||
| VGS | gate-source voltage | 20 | V | ||
| ID | DC drain current | 1.5 | A | ||
| Ptot | total power dissipation | Tmb =25 °C | 20 | W | |
| Tstg | storage temperature | -65 | 150 | C | |
| Tj | junction temperature | 200 | C | ||
BLF542 Features
* High power gain
* Easy power control
* Gold metallization
* Good thermal stability
* Withstands full load mismatch
* Designed for broadband operation.
* Easy power control
* Gold metallization
* Good thermal stability
* Withstands full load mismatch
* Designed for broadband operation.
BLF542 Connection Diagram
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