BLF348, BLF368, BLF378 Selling Leads, Datasheet
MFG:PHI D/C:N.A
BLF348, BLF368, BLF378
- Table of contents:
Info of BLF348
Info of BLF368
Info of BLF378
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About BLF348
PDF/DataSheet Download
Datasheet: BLF348
File Size: 85594 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLF368
PDF/DataSheet Download
Datasheet: BLF368
File Size: 136158 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLF378
PDF/DataSheet Download
Datasheet: BLF378
File Size: 138221 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
BLF348 General Description
Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for broadcast transmitter applications in the VHF frequency range.
The transistor is encapsulated in a 4-lead, SOT262 A1 balanced flange envelope, with two ceramic caps. The mounting flange provides the common source connection for the transistors.
BLF348 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDS | drain-source voltage | 65 | V | ||
| VGS | gate-source voltage | 20 | V | ||
| ID | DC drain current | 25 | A | ||
| Ptot | total power dissipation | up to Tmb = 25 C; total device;both sections equally loaded | 500 | W | |
| Tstg | storage temperature | -65 | 150 | C | |
| Tj | junction temperature | 200 | C | ||
BLF368 General Description
Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for broadcast transmitter applications in the VHF frequency range.
The transistor is encapsulated in a 4-lead SOT262A1 balanced flange package, with two ceramic caps. The mounting flange provides the common source connection for the transistors.
The transistor is encapsulated in a 4-lead SOT262A1 balanced flange package, with two ceramic caps. The mounting flange provides the common source connection for the transistors.
BLF368 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDS | drain-source voltage | 65 | V | ||
| VGS | gate-source voltage | ±20 | V | ||
| ID | DC drain current | 25 | A | ||
| Ptot | total power dissipation | up to Tmb = 25 C; total device;both sections equally loaded | 500 | W | |
| Tstg | storage temperature | -65 | 150 | C | |
| Tj | junction temperature | 200 | C | ||
BLF368 Features
* High power gain
* Easy power control
* Good thermal stability
* Gold metallization ensures excellent reliability.
* Easy power control
* Good thermal stability
* Gold metallization ensures excellent reliability.
BLF368 Connection Diagram
BLF378 General Description
Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the common source connection for the transistors.
BLF378 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDS | drain-source voltage | 65 | V | ||
| VGS | gate-source voltage | ±20 | V | ||
| ID | DC drain current | 18 | A | ||
| Ptot | total power dissipation | up to Tmb = 25 C; total device;both sections equally loaded | 500 | W | |
| Tstg | storage temperature | -65 | 150 | C | |
| Tj | junction temperature | 200 | C | ||
BLF378 Features
* High power gain
* Easy power control
* Good thermal stability
* Gold metallization ensures excellent reliability.
* Easy power control
* Good thermal stability
* Gold metallization ensures excellent reliability.
BLF378 Typical Application
* Broadcast transmitter applications in the VHF frequency range.
BLF378 Connection Diagram
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