BLF2022-120, BLF2022-30, BLF2022-40 Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:SOT539A D/C:N/A
BLF2022-120, BLF2022-30, BLF2022-40 Datasheet download
Part Number: BLF2022-120
MFG: PHILIPS
Package Cooled: SOT539A
D/C: N/A
BLF2022-120, BLF2022-30, BLF2022-40
- Table of contents:
Info of BLF2022-120
Info of BLF2022-30
Info of BLF2022-40
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About BLF2022-120
PDF/DataSheet Download
Datasheet: BLF2022-120
File Size: 98549 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLF2022-30
PDF/DataSheet Download
Datasheet: BLF2022-30
File Size: 107743 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLF0810-180
PDF/DataSheet Download
Datasheet: BLF0810-180
File Size: 120279 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
BLF2022-120 General Description
Push-pull silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 4-lead flange package
(SOT539A) with a ceramic cap. The common source is connected to the mounting flange.
(SOT539A) with a ceramic cap. The common source is connected to the mounting flange.
BLF2022-120 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDS | drain-source voltage | 65 | V | ||
| VGS | gate-source voltage | ±15 | V | ||
| ID | DC drain current | 18 | A | ||
| Tstg | storage temperature | -65 | 150 | C | |
| Tj | junction temperature | 200 | C | ||
BLF2022-120 Features
* High power gain
* Easy power control
* Excellent ruggedness
* Source on underside eliminates DC isolators, reducing common mode inductance
* Designed for broadband operation (HF to 2.2 GHz).
* Easy power control
* Excellent ruggedness
* Source on underside eliminates DC isolators, reducing common mode inductance
* Designed for broadband operation (HF to 2.2 GHz).
BLF2022-120 Typical Application
* Common source class-AB operation for PCN and PCS applications in the 2000 to 2200 MHz frequency range.
BLF2022-120 Connection Diagram
BLF2022-30 General Description
30 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz.
BLF2022-30 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDS | drain-source voltage | 65 | V | ||
| VGS | gate-source voltage | ±15 | V | ||
| ID | DC drain current | 4.5 | A | ||
| Tstg | storage temperature | -65 | 150 | C | |
| Tj | junction temperature | 200 | C | ||
BLF2022-30 Features
* Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 240 mA:
Output power = 3.5 W (AV)
Gain = 12.9 dB
Efficiency = 16.5%
ACPR = -45 dBc at 3.84 MHz
dim = -42 dBc
* Easy power control
* Excellent ruggedness
* High power gain
* Excellent thermal stability
* Designed for broadband operation (2000 to 2200 MHz)
* Internally matched for ease of use.
Output power = 3.5 W (AV)
Gain = 12.9 dB
Efficiency = 16.5%
ACPR = -45 dBc at 3.84 MHz
dim = -42 dBc
* Easy power control
* Excellent ruggedness
* High power gain
* Excellent thermal stability
* Designed for broadband operation (2000 to 2200 MHz)
* Internally matched for ease of use.
BLF2022-30 Typical Application
* RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 to 2200 MHz frequency range.
BLF2022-30 Connection Diagram
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