BF998WR, BF998WR88, BF999 Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:SOT343 D/C:06+
BF998WR, BF998WR88, BF999 Datasheet download
Part Number: BF998WR
MFG: PHILIPS
Package Cooled: SOT343
D/C: 06+
BF998WR, BF998WR88, BF999
- Table of contents:
Info of BF998WR
Info of BF998WR88
Info of BF999
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About BF998WR
PDF/DataSheet Download
Datasheet: BF998WR
File Size: 96878 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BF901
PDF/DataSheet Download
Datasheet: BF901
File Size: 48109 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BF999
PDF/DataSheet Download
Datasheet: BF999
File Size: 137184 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
BF998WR General Description
Depletion type field-effect transistor in a plastic microminiature SOT343R package with source and substrate interconnected. The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.
BF998WR Maximum Ratings
|
SYMBOL |
PARAMETER |
CONDITIONS | MIN. |
TYP. |
MAX. |
UNIT |
| VDS | drain-source voltage | - | - | 12 | V | |
| ID | drain current | - | - | 30 | mA | |
| Ptot | total power dissipation | - | - | 300 | mW | |
| Tj | junction temperature | - | - | 150 | °C | |
| |Yfs| | transfer admittance | - | 24 | - | mS | |
| Cig1-s | input capacitance at gate 1 | - | 2.1 | - | pF | |
| Crs | reverse transfer capacitance | f = 1 MHz | - | 25 | - | fF |
| F | noise figure | f = 800 MHz | - | 1 | - | dB |
BF998WR Features
· High forward transfer admittance
· Short channel transistor with high forward transfer admittance to input capacitance ratio
· Low noise gain controlled amplifier up to 1 GHz.
BF998WR Typical Application
· VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment.
BF998WR Connection Diagram
BF999 Maximum Ratings
|
Parameter |
Symbol |
Values |
Unit |
|
Drain-source voltage |
VDS |
20 |
V |
|
Drain current |
ID |
30 | |
|
Gate 1/gate 2 peak source current |
± IG1/2SM |
10 | |
|
Total power dissipation,TS <60 ˚C |
Ptot |
200 |
mW |
|
Storage temperature |
Tstg |
- 55 ... + 150 |
˚C |
|
Channel temperature |
Tch |
150 |
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