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The ATF-10236 is a high performance gallium arsenide Schottky-barriergate field effect transistor housed in a cost effective microstrip package. Its low noise figure makes this device appropriate for use in the first and second stages of low noise amplifiers operating in the 0.5-12ÊGHz frequency range.
This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers. Total gate periphery is 500 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.
ATF-10236 Maximum Ratings
Symbol
Parameter
Units
Absolute Maximum[1]
VDS
Drain Source Voltage
V
+5
VGS
Gate Source Voltage
V
-4
VGD
Gate-Drain Voltage
V
-7
ID
Drain Current
mA
IDSS
PT
Power Dissipation [2,3]
mW
430
TCH
Channel Temperature
°C
175
TSTG
Storage Temperature[4]
°C
175
Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASETEMPERATURE = 25°C. 3. Derate at 2.9 mW/°C for TCASE > 25°C. 4. Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit.After a device has been soldered into a circuit, it may be safely stored up to 175°C. 5. The small spot size of this technique results in a higher, though more accurate determination of jct han do alternate methods. See MEASUREMENTS section for more information.
ATF-10236 Features
• Low Noise Figure: 0.8ÊdB Typical at 4ÊGHz • Low Bias: VDS = 2 V, IDS = 20ÊmA • High Associated Gain: 13.0ÊdB Typical at 4ÊGHz • High Output Power: 20.0ÊdBm Typical P1dB at 4ÊGHz • Cost Effective Ceramic Microstrip Package • Tape-And-Reel Packaging Option Available[1]