ATF-10100

Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T_{CASE TEMPERATURE} = 25°C.
3. Derate at 4.4 mW/°C for T_CASE > 78°C.
4. The small spot size of this technique results in a higher, though more accurate determination of qjc than do alternate methods. See APPLICATIONS PRIMER IIIA for more information.

The ATF-10100 is a high performance gallium arsenide Schottkybarrier- gate field effect transistor S D S G G chip. Its premium noise figure makes this device appropriate for use in the first stage of low noise amplifiers operating in the 0.5-12 GHz frequency range.

This GaAs FET device ATF-10100 has a nominal 0.3 micron gate length interconnects between drain fingers. Total gate periphery is 500 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.