ATF-10170

ATF-10170 is a kind of high performance gallium arsenide Schottky-barrier-gate field effect transistor housed in a hermetic and high reliability package.Its premium noise figure makes this device appropriate for use in the first stage of low noise amplifiers operating in the 0.5-12 GHz frequency range.There are some features as follows.First is low noise figure:0.5 dB typical at 4 GHz.The second is low bias:V_DS=2 V,I_DS=25 mA.Then is high associated gain:14.0 dB typical at 4 GHz.Next is high output power:21.0 dBm typical P1 dB at 4 GHz.The last one is hermetic gold-ceramic microstrip package.

What comes next is about the ATF-10170 absolute maximum ratings.The V_DS (drain-source voltage) is +5 V.The V_GS (gate-source voltage) is -4 V.The I_DS (drain current) is I_DSS.The P_T (power dissipation) is 430 mW.The T_CH (channel temperature) is 175.The T_STG (storage temperature) is from -65 to +175.

The following is about the ATF-10170 electrical specifications (T_A=25).The typical NF_O (optimum noise figure) is 0.4 dB at V_DS=2 V,I_DS=25 mA,f=2.0 GHz;The typical NF_O (optimum noise figure) is 0.5 dB and the maximum is 0.6 dB at V_DS=2 V,I_DS=25 mA,f=4.0 GHz;The typical NF_O (optimum noise figure) is 0.7 dB at V_DS=2 V,I_DS=25 mA,f=6.0 GHz.The typical G_A (gain @ NF_O) is 17.0 dB at V_DS=2 V,I_DS=25 mA,f=2.0 GHz;The minimum G_A (gain @ NFO) is 12.5 dB and the typical is 14.0 dB at V_DS=2 V,I_DS=25 mA,f=4.0 GHz;The typical G_A (gain @ NF_O) is 12.0 dB at V_DS=2 V,I_DS=25 mA,f=6.0 GHz.The typical P_{1 dB} (output power @ 1 dB gain compression) is 21.0 dBm at V_DS=4 V,I_DS=70 mA,f=4.0 GHz.The typical G_{1 dB} (1 dB gain compression) is 15.0 dB at V_DS=4 V,I_DS=70 mA,f=4.0 GHz.The minimum gm (transconductance) is 80 mmho and the typical is 140 mmho at V_DS=2 V,V_GS=0 V.The minimum I_DSS (saturated drain current) is 50mA,the typical is 130 mA and the maximum is 180 mA at V_DS=2 V,V_GS=0 V.The minimum V_P (pinoff voltage) is -3.0 V,the typical is -1.3 V and the maximum is -0.8 V at V_DS=2 V,I_DS=1 mA.