ATF-13100

Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T_{MOUNTING SURFACE} = 25°C.
3. Derate at 4 mW/°C for T_{MOUNTING SURFACE} > 119°C.
4. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section for more information.

The ATF-13100 is a high performance gallium arsenide Schottky-barrier-gate field effect transistor chip. This device is designed for use in low noise, wideband amplifier and oscillator applications in the 2-18? GHz frequency range.This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250 microns. Proven gold basedmetallization systems and nitrid passivation assure a rugged,reliable device.

The ATF-13100 recommended mounting procedure is to die attach at a stage temperature of 300°C using a gold-tin preform under forming gas. Assembly can be preformed with either wedge or ball bonding using 0.7 mil gold wire. See also "Chip Use" in the APPLICATIONS section.