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AOT9610, AOT-AEKWU-D-H, AOTF10N60

Table of contents:
Info of AOT9610
Info of AOT-AEKWU-D-H
Info of AOTF10N60

AOT9610, AOT-AEKWU-D-H, AOTF10N60 Selling Leads, Datasheet

MFG:AOS Package Cooled:TO-220 D/C:09+pbf

AOT9610, AOT-AEKWU-D-H, AOTF10N60 Picture

AOT9610, AOT-AEKWU-D-H, AOTF10N60 Datasheet download

Five Points

Part Number: AOT9610

MFG: AOS

Package Cooled: TO-220

D/C: 09+pbf

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AOTF10N60 General Description

The AOT10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.

AOTF10N60 Maximum Ratings

Parameter	Symbol	AOT10N60	AOTF10N60	Unit
Drain-Source Voltage	V_DS	600	600	V
Gate-Source Voltage	V_GS	±30	±30	V
Avalanche Current C	I_AR	4.4	4.4	A
Continuous Drain Current B TC=25 TC=100	I_D	10 6.4	10 6.4	A
Pulsed Drain Current C	I_DM	36	36	A
Single pulsed avalanche energy G	E_AS	290	290	mJ
Repetitive avalanche energy C	E_AR	580	580	mJ
Peak diode recovery dv/dt	dv/dt	5	5	V/ns
Power Dissipation B TC=25 Derate above 25	P_D	208 1.7	50 0.4	W/
Junction and Storage Temperature Range	T_{J,T_stg}	-55 to +150	-55 to +150
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds	T_L	300	300

* Drain current limited by maximum junction temperature.

AOTF10N60 Features

`V_DS (V) = 700V @ 150°C
`I_D = 10A
`R_DS(ON) < 0.75 (V_GS = 10V)

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