AM81214-015, AM81214-060, AM81214-30 Selling Leads, Datasheet
MFG:ASI D/C:07+
AM81214-015, AM81214-060, AM81214-30 Datasheet download
Part Number: AM81214-015
MFG: ASI
Package Cooled:
D/C: 07+
AM81214-015, AM81214-060, AM81214-30
- Table of contents:
Info of AM81214-015
Info of AM81214-060
Info of AM81214-30
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About AM81214-015
PDF/DataSheet Download
Datasheet: AM81214-015
File Size: 65575 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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About AM81214-060
PDF/DataSheet Download
Datasheet: AM81214-060
File Size: 97560 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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About AM8
PDF/DataSheet Download
Datasheet: AM8
File Size: 417268 KB
Manufacturer:
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AM81214-015 General Description
The AM81214-015 device is a high power Class C transistor specifically designed for L-Band Radar pulsed output and driver applications.
This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and is capable of withstanding 5:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.
AM81214-015 is supplied in the grounded IMPACTM Hermetic Metal/Ceramic package with internal input/output matching structures.
This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and is capable of withstanding 5:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.
AM81214-015 is supplied in the grounded IMPACTM Hermetic Metal/Ceramic package with internal input/output matching structures.
AM81214-015 Maximum Ratings
| Symbol | Parameter | Value | Unit |
| PDISS | Power Dissipation* (TC 100°C) | 37.5 | W |
| IC | Device Current* | 1.8 | A |
| VCC | Collector-Supply Voltage* | 32 | V |
| TJ | Junction Temperature (Pulsed RF Operation) | 250 | °C |
| TSTG | Storage Temperature | - 65 to +200 | °C |
AM81214-060 General Description
The AM81214-060 device is a high power transistor specifically designed for L-Band radar pulsed outputand driver applications.
The device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and is capable of withstanding 8:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.
The AM81214-060 is supplied in the AMPACTM Hermetic Metal/Ceramic package with internal Input/Output matching structures.
The device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and is capable of withstanding 8:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.
The AM81214-060 is supplied in the AMPACTM Hermetic Metal/Ceramic package with internal Input/Output matching structures.
AM81214-060 Maximum Ratings
| Symbol | Parameter | Value | Unit |
| PDISS | Power Dissipation* (TC100°C) | 107 | W |
| IC | Device Current* | 5.0 | A |
| VCC | Collector-Supply Voltage* | 32 | V |
| TJ | Junction Temperature (Pulsed RF Operation) | 250 | °C |
| TSTG | Storage Temperature | - 65 to +200 | °C |
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