AM80610-018

The  AM80610-018 possesses the features of refractory/gold metallization, emitter site ballasted, low thermal resistance, input/output matching, overlay geometry, metal/ceramic hermetic package, pout = 18 min. with 8.6 db gain.

The AM80610-018 is a high power, common base NPN silicon bipolar device optimized for CW operation in the 620 - 960 MHz frequency range. AM80610-018 utilizes a rugged, overlay, emitter-ballasted L-Band die geometry to achieve high gain and collector efficiency and is suitable for driver or output stage use in class power amplifiers. Typical applications include military communications, ECM, and test equipment. The AM80610-018 is provided in the industrystandard, metal/ceramic AMPACTM hermetic pack.

The absolute maximum ratings of AM80610-018 (Tease = 25) are known, which are PDISS(power dissipation)*= 40W, IC(Device Current)*=2.0 A, VCC(collector-supply voltage)*=32V, TJ(Junction Temperature)=200, Tstg(storage temperature)= - 65 to +200.(* applies only to rated RF amplifer operation). The static electrical specification @ Tcase=25 are BVCBO(@ lc =10mA IE = 0mA)=55V(min), BVEBO(@ IE = 1mA lC= 0mA)=3.5V(min), BVCER(@ IC =20mA RBE =10)=55V(min), ICES(@ VBE= 0V VCE = 28V)=5mA(max), hFE( @VCE = 5V lC =1A)=15(min)/150(max).