AM80814-005

Specifications

Symbol	Parameter	Value	Unit
PDISS	Power Dissipation* (TC  100°C)	23	W
IC	Device Current*	1.0	A
VCC	Collector-Supply Voltage*	28	V
TJ	Junction Temperature (Pulsed RF Operation)	250	°C
TSTG	Storage Temperature	- 65 to +200	°C

Description

The AM80814-005 device is a high power Class C transistor specifically designed for L-Band radar pulsed driver applications.

This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 5:1 output VSWR at rated RF conditions. Low thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.

The AM80814-005 is supplied in the IMPAC^TM  Hermetic Metal/Ceramic package with internal Input/Output matching structures.