AM80610-030

Specifications

Symbol	Parameter	Value	Unit
PDISS	Power Dissipation* (TC 50°C)	57	W
IC	Device Current*	3.0	A
VCC	Collector-Supply Voltage*	32	V
TJ	Junction Temperature	200	°C
TSTG	Storage Temperature	- 65 to +200	°C

Description

The AM80610-030 is a high power, common base NPN silicon bipolar device optimized for CW operation in the 620 - 960 MHz frequency range.

AM80610-030 utilizes a rugged, overlay, emitterballasted L-Band die geometry to achieve high gain and collector efficiency and is suitable for driver or output stage use in Class C power amplifiers. Typical applications include military communications, ECM, and test equipment.

The AM80610-030 is provided in the industrystandard, metal/ceramic AMPAC^TM  hermetic package.