AM80814-025

Specifications

Symbol	Parameter	Value	Unit
PDISS	Power Dissipation* (TC 75°C)	75	W
IC	Device Current*	3.5	A
VCC	Collector-Supply Voltage*	38	V
TJ	Junction Temperature (Pulsed RF Operation)	250	°C
TSTG	Storage Temperature	- 65 to +200	°C

Description

AM80814-025 is a high power silicon Class C transistor designed for ultra-broadband L-Band radar applications.

This device is capable of operation over a broad range of pulse widths and duty cycles. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.

AM80814-025 is supplied in the industry-standard AMPAC™ hermetic Metal/Ceramic package incorporating Input/Output impedance matching.