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The GVT7232A8 is organized as a 32,768 x 8 SRAM using a four-transistor memory cell with a high performance,silicon gate, low-power CMOS process. Galvantech SRAMs are fabricated using double-layer polysilicon, double-layer metal technology.
Static design eliminates the need for external clocks or timing strobes. For increased system flexibility and eliminating bus contention problems, this device offers one chip enable (CE#) along with output enable (OE#) for this organization.
The chip is enabled when CE# is LOW. With chip being enabled, writing to this device is accomplished when write enable (WE#) is LOW and reading is accomplished when (OE#) go LOW with (WE#) remaining HIGH. The device offers a low power standby mode when chip is not selected.This allows system designers to meet low standby power requirements.
6536 Maximum Ratings
Voltage on VCC Supply Relative to VSS........-0.5V to +7.0V VIN ........................................................-0.5V to VCC+0.5V Storage Temperature (plastic) ..................-55oC to +125o Junction Temperature ..............................................+125o Power Dissipation .....................................................1.2W Short Circuit Output Current ....................................50mA *Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
6536 Features
• Fast access times: 8, 10, and 12ns • Fast OE# access times: 5 and 6ns • Single +5V +10% power supply • Fully static -- no clock or timing strobes necessary • All inputs and outputs are TTL-compatible • Three state outputs • High-performance, low-power consumption, CMOS double-poly, double-metal process